SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT

• US 20140077326A1
• Filed: 11/18/2013
• Published: 03/20/2014
• Est. Priority Date: 10/27/2009
• Status: Active Grant

• Current Assignee: Sony Semiconductor Solutions Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Koshino, Yasunori, Toda, Atsushi, Otsuka, Yoichi
• Granted Patent: US 8,994,858 B2
• Time in Patent Office: Days
• US Class Current: 257/432
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H04N 25/134 based on three different wavelength filter elements
• CPC Class Codes: H04N 25/61 the noise originating only from the lens unit, e.g. flare, shading, vignetting or "cos4"
• CPC Class Codes: H04N 25/616 involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling

Abstract

A solid-state imaging device includes a photoelectric transformation portion and a micro lens, the micro lens has a first refractive index layer which is a first refractive index and a second refractive index layer which is a second refractive index different from the first refractive index, wherein the micro lens is configured so that a vertical cross section, which is a surface perpendicular to the capturing surface, has a rectangular shape, wherein each of the first refractive index layer and the second refractive index layer are arranged adjacent to each other in a direction along the capturing surface, and an interface between the first refractive index layer and the second refractive index layer in the vertical cross section is formed so as to follow a direction perpendicular to the capturing surface.

Claims

1-18. -18. (canceled)

19. A solid-state imaging device, comprising:

a pixel area, wherein the pixel area includes;

a plurality of pixels, wherein each of the pixels includes at least one photodiode and a micro lens,

wherein the micro lens is formed over the photodiodes of the pixels,

wherein the micro lens includes;

a first layer, wherein the first layer has a first refractive index; and

a second layer, wherein the second layer has a second refractive index that is different than the first refractive index,

wherein the pixel area has a center area and a peripheral area, and

wherein a shape of a micro lens of a pixel in the plurality of pixels in the center area is different than the shape of a micro lens of a pixel in the peripheral area.

20. The solid-state imaging device of claim 19, wherein a pitch between centers of the first refractive index layers in a first one of a horizontal and a vertical directions is less than a pitch between centers of the pixels in the first one of the horizontal and vertical directions.

21. The solid-state imaging device of claim 20, wherein a pitch between centers of the first refractive index layers in a second one of the horizontal and the vertical directions is less than a pitch between centers of the pixels in the second one of the horizontal and vertical directions.

22. The solid-state imaging device of claim 21, wherein for each of the pixels the size of an area of the first layer is the same.

23. The solid-state imaging device of claim 22, wherein for each of the pixels the size of an area of the second layer is the same.

24. The solid-state imaging device of claim 19, wherein the micro lens is rectangular in a horizontal plane along a capturing surface.

25. The solid-state imaging device of claim 19, wherein for each of the pixels the size of an area of the first layer is the same.

26. The solid-state imaging device of claim 19, wherein for each pixel in the peripheral area a center of the first layer in a horizontal cross section does not correspond to a center of the second layer in the horizontal cross section.

27. The solid-state imaging device of claim 19, wherein the first refractive index is higher than the second refractive index.

28. The solid-state imaging device of claim 19, wherein for at least a center pixel the first layer has a center in the horizontal cross section that corresponds to a center of the second layer in the horizontal cross section.