METHOD FOR IN SITU CLEANING OF MOCVD REACTION CHAMBER
First Claim
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1. A method for in situ cleaning of a Metal-Organic Chemical Vapor Deposition reaction chamber, comprising:
- performing Step a, comprising;
introducing a first cleaning gas into the reaction chamber, and converting the first cleaning gas into a first plasma inside the reaction chamber; and
/or,converting the first cleaning gas into the first plasma outside the reaction chamber and introducing the first plasma into the reaction chamber; and
/or,introducing the first cleaning gas into the reaction chamber and maintaining a temperature inside the reaction chamber in a range of 200°
C. to 500°
C.; and
maintaining a pressure inside the reaction chamber in a first predetermined pressure range for a first time period to completely remove a carbonaceous organic substance inside the reaction chamber and convert a metal and its compound inside the reaction chamber into a metallic oxide, wherein the first cleaning gas comprises a first oxygen-containing gas; and
performing Step b, comprising;
introducing a second cleaning gas into the reaction chamber, and converting the second cleaning gas into a second plasma inside the reaction chamber; and
/or,converting the second cleaning gas into the second plasma outside the reaction chamber and introducing the second plasma into the reaction chamber; and
/or,introducing the second cleaning gas into the reaction chamber and maintaining the temperature inside the reaction chamber in a range of 200°
C. to 500°
C.; and
maintaining the pressure inside the reaction chamber in a second predetermined pressure range for a second time period to completely remove the metallic oxide inside the reaction chamber, wherein the second cleaning gas comprises a first halogen-containing gas.
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Abstract
A method for in situ cleaning of a Metal-Organic Chemical Vapor Deposition reaction chamber is provided in embodiments of the present invention. The method includes: introducing a first cleaning gas into the reaction chamber, converting the first cleaning gas into first plasma inside the reaction chamber to completely remove a carbonaceous organic substance inside the reaction chamber, wherein the first cleaning gas includes a first oxygen-containing gas; and introducing a second cleaning gas into the reaction chamber, and converting the second cleaning gas into second plasma inside the reaction chamber to completely remove a metallic oxide inside the reaction chamber, wherein the second cleaning gas includes a first halogen-containing gas.
9 Citations
9 Claims
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1. A method for in situ cleaning of a Metal-Organic Chemical Vapor Deposition reaction chamber, comprising:
-
performing Step a, comprising; introducing a first cleaning gas into the reaction chamber, and converting the first cleaning gas into a first plasma inside the reaction chamber; and
/or,converting the first cleaning gas into the first plasma outside the reaction chamber and introducing the first plasma into the reaction chamber; and
/or,introducing the first cleaning gas into the reaction chamber and maintaining a temperature inside the reaction chamber in a range of 200°
C. to 500°
C.; andmaintaining a pressure inside the reaction chamber in a first predetermined pressure range for a first time period to completely remove a carbonaceous organic substance inside the reaction chamber and convert a metal and its compound inside the reaction chamber into a metallic oxide, wherein the first cleaning gas comprises a first oxygen-containing gas; and performing Step b, comprising; introducing a second cleaning gas into the reaction chamber, and converting the second cleaning gas into a second plasma inside the reaction chamber; and
/or,converting the second cleaning gas into the second plasma outside the reaction chamber and introducing the second plasma into the reaction chamber; and
/or,introducing the second cleaning gas into the reaction chamber and maintaining the temperature inside the reaction chamber in a range of 200°
C. to 500°
C.; andmaintaining the pressure inside the reaction chamber in a second predetermined pressure range for a second time period to completely remove the metallic oxide inside the reaction chamber, wherein the second cleaning gas comprises a first halogen-containing gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Current AssigneeAdvanced Micro-Fabrication Equipment Inc.
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Original AssigneeAdvanced Micro-Fabrication Equipment Inc.
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InventorsYin, Gerald Zheyao, Du, Zhiyou, Meng, Shuang, Wang, Yang, Zhang, Ying, Xu, Songlin, Zhu, Ban, Takiguchi, Haruhisa
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Application NumberUS14/032,138Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current134/1.1CPC Class CodesC23C 16/4405 Cleaning of reactor or part...H01J 37/32862 In situ cleaning of vessels...
