Method of Manufacturing Semiconductor Device, Substrate Processing Method and Apparatus, Non-Transitory Computer Readable Recording Medium, and Semiconductor Device

• US 20140084389A1
• Filed: 09/25/2013
• Published: 03/27/2014
• Est. Priority Date: 09/26/2012
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Ogawa, Arito
• Granted Patent: US 9,082,747 B2
• Time in Patent Office: Days
• US Class Current: 257/411
• CPC Class Codes: C23C 16/403 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45529 specially adapted for making a layer stack of alternating different compositions or gradient compositions
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02194 the material containing more than one metal element
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 29/408 with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/66833 with a charge trapping gate insulator, e.g. MNOS transistors

Abstract

Provided are a semiconductor device manufacturing method by which a semiconductor device in which a threshold voltage is suppressed from changing can be manufactured, a substrate processing method and apparatus, a non-transitory computer-readable recording medium, and the semiconductor device. The semiconductor device manufacturing method includes forming an amorphous first oxide film including a first element on a substrate, and modifying the first oxide film to an amorphous second oxide film including the first element and a second element different from the first element by adding the second element to the first oxide film. The first element includes at least one element selected from a group consisting of aluminum, yttrium and lanthanum. A concentration of the second element in the second oxide film is controlled to be lower than that of the first element in the second oxide film.

Claims

1. A method of manufacturing a semiconductor device, comprising:

(a) forming an amorphous first oxide film including a first element on a substrate; and

(b) modifying the first oxide film to an amorphous second oxide film including the first element and a second element different from the first element by adding the second element to the first oxide film,

wherein the first element comprises at least one element selected from a group consisting of aluminum, yttrium and lanthanum, and a concentration of the second element in the second oxide film is lower than that of the first element in the second oxide film.

2. The method of claim 1, wherein the concentration of the second element in the second oxide film is equal to or lower than 40%.

3. The method of claim 1, wherein the concentration of the second element in the second oxide film is higher than 2% and lower than 38%.

4. The method of claim 1, wherein the concentration of the second element in the second oxide film is substantially 12%.

5. The method of claim 1, further comprising repeating the step (a) and the step (b) a predetermined number of times to form the second oxide film having a predetermined thickness.

6. The method of claim 1, wherein the second element comprises at least one element selected from a group consisting of hafnium, zirconium, yttrium, lanthanum, niobium, tantalum, strontium, titanium and silicon.

7. The method of claim 1, wherein the first element is aluminum, the second element is one of hafnium and zirconium, the first oxide film comprises an aluminum oxide film, and the second oxide film comprises one of an aluminum hafnium oxide film and an aluminum zirconium oxide film.

8. The method of claim 1, wherein a crystallization temperature of the second element is lower than that of the first element.

9. The method of claim 1, wherein the second element has an atomic radius that is greater than that of the first element.

10. The method of claim 1, wherein the second oxide film remains in an amorphous state after the second oxide film is heated to 1000°

C.

11. The method of claim 1, wherein (a) comprises performing a first cycle a predetermined number of times, the first cycle at least including:

(a-1) exposing the substrate to a first source gas including the first element;

(a-2) removing the first source gas remaining after performing (a-1);

(a-3) exposing the substrate to a first oxygen-containing gas; and

(a-4) removing the first oxygen-containing gas remaining after performing (a-3),

wherein (b) comprises performing a second cycle a predetermined number of times, the second cycle at least including;

(b-1) exposing the substrate having the first oxide film formed thereon to a second source gas including the second element, the second source gas being different from the first source gas;

(b-2) removing the second source gas remaining after performing (b-1);

(b-3) exposing the substrate to a second oxygen-containing gas; and

(b-4) removing the second oxygen-containing gas remaining after performing (b-3),

wherein the concentration of the second element in the second oxide film is controlled to be at a predetermined level by performing (a) and (b) a predetermined number of times.

12. A substrate processing method comprising:

(a) forming an amorphous first oxide film including a first element on a substrate; and

(b) modifying the first oxide film to an amorphous second oxide film including the first element and a second element different from the first element by adding the second element to the first oxide film,

wherein the first element comprises at least one element selected from a group consisting of aluminum, yttrium and lanthanum, and a concentration of the second element in the second oxide film is lower than that of the first element in the second oxide film.

13. A substrate processing apparatus comprising:

a process chamber accommodating a substrate therein;

a first source gas supply system configured to supply a first source gas including at least a first element onto the substrate in the process chamber, wherein the first element is selected from the group consisting of aluminum, yttrium and lanthanum;

a second source gas supply system configured to supply a second source gas onto the substrate in the process chamber, wherein the second source gas includes a second element different from the first element, and the second source gas being different from the first source gas;

an oxygen-containing gas supply system configured to supply an oxygen-containing gas onto the substrate in the process chamber; and

a control unit configured to control the first source gas supply system, the second source gas supply system and the oxygen-containing gas supply system to perform;

(a) forming an amorphous first oxide film including a first element on a substrate; and

(b) modifying the first oxide film to an amorphous second oxide film including the first element and a second element different from the first element by adding the second element to the first oxide film in a manner that a concentration of the second element in the second oxide film is lower than that of the first element in the second oxide film.

14. A non-transitory computer-readable recording medium storing a program that causes a computer to perform:

(a) forming a first oxide film including at least a first element on a substrate accommodated in a process chamber of a substrate processing apparatus, wherein the first element is selected from a group consisting of aluminum, yttrium and lanthanum; and

(b) adding a second element different from the first element into the first oxide film formed on the substrate in a manner that a concentration of the second element in the first oxide film is lower than that of the first element in the first oxide film.

15. A semiconductor device comprising:

a gate electrode; and

an insulating film comprising an amorphous oxide film including a first element selected from a group consisting of aluminum, yttrium and lanthanum and a second element different from the first element, a concentration of the second element being lower than that of the first element.