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NONVOLATILE MEMORY DEVICE

  • US 20140085968A1
  • Filed: 03/12/2013
  • Published: 03/27/2014
  • Est. Priority Date: 09/26/2012
  • Status: Active Grant
First Claim
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1. A nonvolatile memory device, comprising:

  • a magnetic memory element including a stacked body, the stacked body includinga first stacked unit including;

    a first ferromagnetic layer having a fixed direction of magnetization;

    a second ferromagnetic layer having a changeable direction of magnetization; and

    a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer,the first ferromagnetic layer, the second ferromagnetic layer, and the first nonmagnetic layer being stacked in a stacking direction, anda second stacked unit stacked with the first stacked unit in the stacking direction including;

    a third ferromagnetic layer having a changeable direction of magnetization; and

    a nonmagnetic tunneling barrier layer stacked with the third ferromagnetic layer in the stacking direction to contact the third ferromagnetic layer; and

    a control unit electrically connected to the magnetic memory element,the control unit being configured to implement a first operation of setting the magnetic memory element to be in a first state, the first operation including;

    a first preliminary operation of applying a first pulse voltage having a first rising time to the magnetic memory element; and

    a first setting operation of applying a second pulse voltage having a second rising time to the magnetic memory element after the first preliminary operation, the second rising time being longer than the first rising time.

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