POLING STRUCTURES AND METHODS FOR PHOTONIC DEVICES EMPLOYING ELECTRO-OPTICAL POLYMERS

• US 20140086523A1
• Filed: 09/27/2012
• Published: 03/27/2014
• Est. Priority Date: 09/27/2012
• Status: Abandoned Application

• Current Assignee: Intel Corporation
• Original Assignee: Bruce A. Block, Mauro J. Kobrinsky, Miriam R. Reshotko
• Inventors: Liff, Shawna M., BLOCK, Bruce A., KOBRINSKY, Mauro J., RESHOTKO, Miriam R.
• Application Number:
  US13/629,396
• Publication Number:
  US 20140086523A1
• Time in Patent Office: Days
• US Class Current: 385/3
• CPC Class Codes: G02F 1/065 in an optical waveguide structure
• CPC Class Codes: G02F 1/225 in an optical waveguide structure
• CPC Class Codes: G02F 2201/126 push-pull
• CPC Class Codes: Y10T 29/49002 Electrical device making

Abstract

EOP-based photonic devices employing coplanar electrodes and in-plane poled chromophores and methods of their manufacture. In an individual EOP-based photonic device, enhanced performance is achieved through in-plane poled chromophores having opposing polarities, enabling, for example, a push-pull optical modulator with reduced operational voltage and switching power relative to a conventional MZ modulator. For a plurality of EOP-based photonic devices, enhanced manufacturability is achieved through a sacrificial interconnect enabling concurrent in-plane poling of many EOP regions disposed on a substrate.

Claims

1. A photonic device comprising:

a first and second optical waveguide;

a first EOP region optically coupled to the first optical waveguide;

a second EOP region optically coupled to the second optical waveguide,

a first electrode laterally spaced apart from a second electrode with the first EOP region disposed there between; and

a third electrode laterally spaced apart from a fourth electrode with the second EOP region disposed there between, wherein the second EOP region has an in-plane pole direction opposite that of the first EOP region.

2. The photonic device of claim 1, wherein the first and second optical waveguides are optically coupled to each other at opposite ends of the first and second EOP regions to form separate arms of an optical modulator.

3. The photonic device of claim 1, further comprising:

first routing metal electrically coupling a first pair of the electrodes; and

second routing metal electrically coupling a second pair of the electrodes to increase a refractive index of the first EOP region and decrease the refractive index of the second EOP region when a signal is applied across the first and second routing metal.

4. The photonic device of claim 3, wherein the first, second, third, and fourth electrodes are coplanar, and wherein the first routing metal comprises a first pair of vias coupled to the second and third electrodes, wherein the second routing metal comprises a second pair of vias coupled to the first and fourth electrodes.

5. The photonic device of claim 4, further comprising:

first poling probe pads coupled to the first routing metal; and

second poling probe pads coupled to the second routing metal.

6. The photonic device of claim 5, wherein each of the first pair of vias is coupled to one of a first pair of metal leads crossing at least one of the electrodes, and each of the first pair of metal leads is coupled to an individual one of the first poling probe pads;

and

wherein each of the second pair of vias is coupled to one of a second pair of metal leads crossing at least one of the electrodes, and wherein each of the second pair of metal leads is coupled to an individual one of the second poling pads.

7. The photonic device of claim 6, wherein at least one of the second pair of electrodes is disposed between ones of the first pair of electrodes to separate the first pair of electrodes with a fixed voltage reference plane.

8. A photonic integrated circuit (PIC), comprising:

n optical modulators, wherein each optical modulator includes an optical waveguide passing between a pair of coplanar electrodes and optically coupled to an EOP region disposed between the pair of electrodes;

at least two poling probe pads; and

at least two bifurcated metal leads, wherein each of the bifurcated metal leads includes at least one segment that is electrically connected by a via to one of the electrodes, and is electrically isolated from the poling probe pads.

9. The PIC of claim 8, wherein each of the bifurcated metal leads includes at least n segments and each of the n segments is electrically connected to only one of the electrodes.

10. The PIC of claim 9, wherein each of the n segments are coupled to an I/O pad.

11. The PIC of claim 9, each of the n optical modulators is a Mach-Zehnder (MZ) modulator or a ring oscillator.

12. The PIC of claim 11, wherein each of the n optical modulators is a push-pull MZ modulator further comprising:

a first and second optical waveguide;

a first EOP region optically coupled to the first optical waveguide;

a second EOP region optically coupled to the second optical waveguide,

a first electrode laterally spaced apart from a second electrode with the first EOP region disposed there between; and

a third electrode laterally spaced apart from a fourth electrode with the second EOP region disposed there between; and

wherein the second EOP region has an in-plane polarity opposite that of the first EOP region, and wherein the at least twp poling probe pads comprises at least four poling probe pads; and

the at least two bifurcated metal leads comprises at least four bifurcated metal leads.

13. The PIC of claim 8, wherein the poling probe pads have probe marks resulting from physical contact by a probe.

14. A photonic device comprising:

a first and second optical waveguide;

a first EOP region optically coupled to the first optical waveguide;

a second EOP region optically coupled to the second optical waveguide,

a first electrode laterally spaced apart from a second electrode with the first EOP region disposed there between;

a third electrode laterally spaced apart from a fourth electrode with the second EOP region disposed there between, wherein the first, second, third, and fourth electrodes are coplanar;

a first bifurcated metal lead comprising first metal lead segments, wherein a first of the first segments is electrically coupled to the first electrode, a second of the first segments is electrically coupled to the third electrode, and a third of the first segments is electrically coupled to a first poling probe pad.

15. The device of claim 14, further comprising a second bifurcated metal lead comprising second coplanar metal lead segments disposed on a same plane as the first segments, wherein a first of the second segments is coupled to the second electrode, a second of the second segments is coupled to the fourth electrode, and a third of the second segments is coupled to a second poling probe pad.

16. The device of claim 14, wherein the first poling probe pad is electrically isolated from the electrodes and wherein the first poling probe pad has probe marks resulting from physical contact by a probe.

17. The device of claim 14, further comprising:

a first plurality vias, each coupling one of the first metal lead segments to one of the first and third electrodes; and

a second plurality of vias, each coupled one of the second metal segments to one of the second and fourth electrodes.

18. A method of fabricating a photonic device, the method comprising:

receiving the photonic device disposed on a substrate, wherein the photonic device comprises;

a first electrode laterally spaced apart from a second electrode with a first EOP region disposed there between; and

a third electrode laterally spaced apart from a fourth electrode with a second EOP region disposed there between; and

applying a voltage to the second and third electrodes relative to the first and fourth electrodes to generate an in-plane field across the first EOP region that opposes an in-plane field across the second EOP region.

19. The method of claim 18, further comprising, electrically coupling the second and fourth electrodes with first metal routing and electrically coupling the first and third electrodes with second metal routing to increase an index of one of the first and second EOP regions and decrease an index of another of the first and second EOP regions when a signal is applied across the first and second metal routing.

20. The method of claim 18, wherein the first electrode is coupled to a first poling probe pad, the second electrode is coupled to a second poling probe pad, the third electrode is coupled to a third poling probe pad, and the fourth electrode is coupled to a fourth poling probe pad, and wherein applying the voltage further comprises:

landing probes of a probe card onto the poling probe pads and applying a voltage to the second and third poling probe pads relative to a reference voltage applied to the first and fourth poling probe pads.

21. The method of claim 18, further comprising:

forming a first and second optical waveguide;

depositing the first EOP material in contact with the first waveguide and the second EOP material in contact with the second waveguide;

connecting the second and third poling probe pads to the second and third electrodes, respectively, with a first routing metal; and

connecting the first and fourth poling probe pads to the first and fourth electrodes, respectively, with a second routing metal.

22. The method of claim 21, wherein the connecting with the first routing metal further comprises forming a first pair of metal leads, each coupled to one of the second and third poling pads by at least one via;

and wherein the connecting with the second routing metal further comprises forming a second pair of metal leads, each coupled to one of the first and fourth poling pads by at least one via.

23. A method of fabricating a plurality of photonic devices, the method comprising:

receiving the plurality of photonic devices disposed over a substrate, each device comprising first and second electrodes spaced apart with an EOP region disposed there between, wherein the first electrodes are coupled to a first poling probe pad by a first metal lead, and wherein the second electrodes are coupled to a second poling probe pad by a second metal lead;

applying a voltage between a first and second poling probe pads to induce an electric field across EOP regions of the plurality of EOP devices concurrently;

curing the plurality of poled EOP regions; and

bifurcating the first and second metal leads to separate the first and second electrodes from the first and second poling probe pads.

24. The method of claim 23, further comprising:

forming the first and second electrodes in a first metal level;

forming the first and second metal leads in a second metal level joined to the first metal level by vias; and

wherein the electric fields induced are in the plane of the substrate.

25. The method of claim 23, wherein bifurcating the first and second metal leads further comprises separating the first electrodes from each other and separating the second electrodes from each other.

26. The method of claim of claim 23, wherein bifurcating the first and second metal leads comprises at least one of etching or polishing through portions of the first and second metal leads extending between ones of the photonic devices.

27. The method of claim 23, further comprising:

depositing a first passivation layer over the EOP regions; and

depositing a second passivation layer over end surfaces of the first and second metal leads exposed by the bifurcating, and over the first passivation layer.