ENHANCED DEPOSITION OF NOBLE METALS
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Abstract
The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.
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Citations
19 Claims
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1. (canceled)
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2. A method for depositing a compound thin film comprising one or more noble metals on a substrate, the method comprising, in order:
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contacting the substrate with a first vapor phase metal reactant, wherein the vapor phase metal reactant does not comprise a noble metal; removing excess first vapor phase metal reactant; contacting the substrate with a second vapor phase noble-metal reactant; and removing excess second noble-metal reactant. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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- 16. An atomic layer deposition process for depositing a film comprising a noble metal on a substrate in a reaction chamber comprising one or more deposition cycles, at least one deposition cycle comprising alternately and sequentially contacting the substrate with vapor phase pulses of a first reactant comprising a metal that is not a noble metal, a second reactant comprising a noble metal and a third reactant comprising nitrogen or carbon.
Specification