MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ANNEALING DEVICE, AND ANNEALING METHOD
First Claim
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1. A method of re-crystallizing an amorphous semiconductor into a single crystal after exposure of the semiconductor to ions used in ion implantation, comprising:
- heat treating the amorphous semiconductor, using microwaves, to a temperature that is higher than or equal to 200°
C. and lower than or equal to 700°
C., the amorphous layer is single crystallized.
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Abstract
According to one embodiment, the manufacturing method for the semiconductor device according to the embodiment includes carrying out ion implantation to the semiconductor layer and forming an amorphous layer on the surface of the semiconductor layer, and a heat treatment process using microwave annealing at a temperature higher than or equal to 200° C. and lower than or equal to 700° C. and single crystallizes the amorphous layer.
25 Citations
19 Claims
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1. A method of re-crystallizing an amorphous semiconductor into a single crystal after exposure of the semiconductor to ions used in ion implantation, comprising:
heat treating the amorphous semiconductor, using microwaves, to a temperature that is higher than or equal to 200°
C. and lower than or equal to 700°
C., the amorphous layer is single crystallized.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A manufacturing method for a semiconductor device, the method comprising:
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performing ion implantation on a semiconductor layer and forming an amorphous layer on a surface of the semiconductor layer; and a first heat treatment step where, using microwave annealing, at a first temperature that is higher than or equal to 200°
C. and lower than or equal to 700°
C., the amorphous layer is re-crystallized into a single crystal;wherein the width of the amorphous layer is L and the height of the amorphous layer is H, the relationship L/H<
4 is satisfied. - View Dependent Claims (11, 12, 13, 14, 15)
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16. An annealing device for semiconductor devices that uses microwaves, comprising:
an auxiliary heating unit that absorbs microwaves, functions as a heating element by induction heating, and includes a magnetic material therein. - View Dependent Claims (17, 18, 19)
Specification