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MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ANNEALING DEVICE, AND ANNEALING METHOD

  • US 20140087547A1
  • Filed: 08/29/2013
  • Published: 03/27/2014
  • Est. Priority Date: 09/21/2012
  • Status: Active Grant
First Claim
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1. A method of re-crystallizing an amorphous semiconductor into a single crystal after exposure of the semiconductor to ions used in ion implantation, comprising:

  • heat treating the amorphous semiconductor, using microwaves, to a temperature that is higher than or equal to 200°

    C. and lower than or equal to 700°

    C., the amorphous layer is single crystallized.

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