MEMS Pressure Sensor Assembly

• US 20140090485A1
• Filed: 10/02/2012
• Published: 04/03/2014
• Est. Priority Date: 10/02/2012
• Status: Abandoned Application

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: O'Brien, Gary, Feyh, Ando Lars
• Application Number:
  US13/633,619
• Publication Number:
  US 20140090485A1
• Time in Patent Office: Days
• US Class Current: 73/862.68
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 2203/0792 Forming interconnections between the electronic processing unit and the micromechanical structure
• CPC Class Codes: G01L 19/0061 Electrical connection means
• CPC Class Codes: G01L 19/148 Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A pressure sensor assembly includes a first die assembly, a second die assembly, and a conducting member. The first die assembly includes a MEMS pressure sensor. The second die assembly includes an ASIC configured to generate an electrical output corresponding to a pressure sensed by the MEMS pressure sensor. The conducting member is positioned between the first die assembly and the second die assembly and is configured and to electrically connect the MEMS pressure sensor to the ASIC.

Claims

1. A pressure sensor assembly comprising:

a first die assembly including a MEMS pressure sensor;

a second die assembly including an ASIC configured to generate an electrical output corresponding to a pressure sensed by said MEMS pressure sensor; and

a conducting member positioned between said first die assembly and said second die assembly and configured and to electrically connect said MEMS pressure sensor to said ASIC.

2. The pressure sensor assembly of claim 1, wherein said MEMS pressure sensor includes a capacitive pressure sensor.

3. The pressure sensor assembly of claim 2, wherein said capacitive pressure sensor includes an epitaxial silicon membrane.

4. The pressure sensor assembly of claim 1, wherein said second die assembly is configured for a bare-die connection to a substrate.

5. The pressure sensor assembly of claim 1, wherein:

the pressure sensor assembly defines a length and a width,

said length times said width equals an area, and

said area is less than about two square millimeters.

6. The pressure sensor assembly of claim 1, wherein a cavity is defined between said first die assembly and said second die assembly.

7. The pressure sensor assembly of claim 6, further comprising:

a bonding member positioned between said first die assembly and said second die assembly and configured to space said first die assembly apart from said second die assembly.

8. The pressure sensor assembly of claim 6, wherein said cavity is exposed to atmosphere.

9. The pressure sensor assembly of claim 1, wherein said second die assembly defines a plurality of through silicon vias.

10. A pressure sensor assembly comprising:

a first die assembly including a MEMS pressure sensor; and

a second die assembly including an ASIC configured to generate an electrical output corresponding to a pressure sensed by said MEMS pressure sensor, said ASIC being electrically connected to said MEMS pressure sensor,

wherein said first die assembly is attached to said second die assembly in a stacked configuration.

11. The pressure sensor assembly of claim 10, wherein a cavity is defined between said first die assembly and said second die assembly.

12. The pressure sensor assembly of claim 11, further comprising:

a bonding member positioned between said first die assembly and said second die assembly and configured to space said first die assembly apart from said second die assembly.

13. The pressure sensor assembly of claim 11, further comprising:

a conducting member positioned between said first die assembly and said second die assembly and configured (i) to electrically connect said MEMS pressure sensor to said ASIC and (ii) to space said first die assembly apart from said second die assembly.

14. The pressure sensor assembly of claim 13, wherein said conducting member electrically connects said MEMS pressure sensor to said ASIC with solder.

15. The pressure sensor assembly of claim 11, wherein said cavity is exposed to atmosphere.

16. The pressure sensor assembly of claim 10, wherein said MEMS pressure sensor includes a capacitive pressure sensor.

17. The pressure sensor assembly of claim 16, wherein said capacitive pressure sensor includes an epitaxial silicon membrane.

18. The pressure sensor assembly of claim 10, wherein said second die assembly is configured for a bare-die connection to a substrate.

19. The pressure sensor assembly of claim 10, wherein:

the pressure sensor assembly defines a length and a width,

said length times said width equals an area, and

said area is less than about two square millimeters.

20. The pressure sensor assembly of claim 10, wherein said second die assembly defines a plurality of through silicon vias.