TEMPERABLE AND NON-TEMPERABLE TRANSPARENT NANOCOMPOSITE LAYERS

• US 20140090974A1
• Filed: 06/28/2012
• Published: 04/03/2014
• Est. Priority Date: 06/30/2011
• Status: Abandoned Application

• Current Assignee: AGC Glass Europe SA (AGC, Inc.)
• Original Assignee: AGC Glass Europe SA (AGC, Inc.)
• Inventors: Ballet, Bart, Di Stefano, Gaetan
• Application Number:
  US14/123,661
• Publication Number:
  US 20140090974A1
• Time in Patent Office: Days
• US Class Current: 204/192.15
• CPC Class Codes: C03C 17/007 containing a dispersed phase, e.g. particles, fibres or flakes, in a continuous phase
• CPC Class Codes: C03C 17/36 at least one coating being a metal
• CPC Class Codes: C03C 17/366 Low-emissivity or solar control coatings
• CPC Class Codes: C03C 2217/45 Inorganic continuous phases
• CPC Class Codes: C03C 2217/475 Inorganic materials
• CPC Class Codes: C03C 2218/156 by magnetron sputtering
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/0057 using reactive gases other than O2, H2O, N2, NH3 or CH4
• CPC Class Codes: C23C 14/06 characterised by the coating material C23C14/0021 , C23C14/04 take precedence
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence

Abstract

The invention concerns a transparent substrate carrying a layer of a transparent dielectric nanocomposite, comprising a matrix of SiN_yO_z, y being in the range 0 to 4/3, z being in the range 0 to 2 and y and z not being equal to 0 simultaneously, said matrix including nanoparticles selected from the group consisting of aluminum nitrides, zirconium nitrides, titanium nitrides, aluminum oxides, zirconium oxides, zinc oxides, titanium oxides, tin oxides, tantalum oxides and mixtures thereof.

Claims

1. A transparent substrate carrying a layer of a transparent dielectric nanocomposite, comprising a matrix of SiN_yO_z, y being in the range 0 to 4/3, z being in the range 0 to 2 and y and z not being equal to 0 simultaneously, said matrix including nanoparticles selected from the group consisting of aluminum nitrides, zirconium nitrides, titanium nitrides, aluminum oxides, zirconium oxides, zinc oxides, titanium oxides, tin oxides, tantalum oxides and mixtures thereof.

2. The transparent substrate according to claim 1, wherein the matrix is SiO₂, Si₃N₄ or a mixture thereof.

3. The transparent substrate according to claim 1 or 2, wherein the nanoparticles are selected from the group consisting of ZrO₂, TiO₂, AlN, ZrN, TiN and mixtures thereof.

4. The transparent substrate according to any of claims 1 to 3, wherein the mean diameter value of nanoparticles is within the range 10 to 150 Å

.

5. The transparent substrate according to any of claims 1 to 4, carrying a multi-layered stack, the layer of a transparent dielectric nanocomposite being a topcoat of said multi-layered stack.

6. The transparent substrate according to claim 5, wherein the multi-layered stack is a Low-e stack, including at least one IR reflective layer and/or at least one absorbing layer.

7. The transparent substrate according to any of claims 5 to 6, wherein the multi-layered stack includes in the following order at least:

one dielectric layer, one epitaxial layer, one IR reflective layer, one barrier layer, one dielectric layer and the layer of a transparent dielectric nanocomposite as topcoat layer.

8. The transparent substrate according to any of claims 6 to 7, wherein the absorbing layer is selected from the group consisting of NiCr, W, Ti, Zr, Nb, nitrides thereof and alloys thereof.

9. The transparent substrate according to any of claims 4 to 8, wherein when the multi-layered stack is including at least one IR reflective layer and at least one absorbing layer, said absorbing layer is between the IR reflective layer and a dielectric layer, below or above the IR reflective layer.

10. A method of depositing a thin film coating on a substrate using a magnetron sputtering device, the method comprising:

providing a vacuum chamber having magnetron means and having a magnetron sputtering target including a first material,

providing means for positioning a substrate in said chamber spaced from said source,

directing a first reactive sputtering gas in the chamber comprising at least one of oxygen, nitrogen and carbon,

directing a second gas in the chamber comprising a second material selected from the group consisting of metals and metalloids, and

forming a coating comprising the first material, the second material and at least one of oxygen, nitrogen and carbon.

11. The method according to claim 10, wherein the method further comprises providing argon in the chamber.

12. The method according to any of claims 10 to 11, wherein the second gas is silane.

13. The method according to any of claims 10 to 12, wherein the magnetron sputtering target is a Zr or Al metallic target.

14. The method according to any of claims 10 to 13, wherein the first reactive sputtering gas is directed in the chamber at a flow rate in the range 30 to 70 sccm.

15. The method according to any of claims 10 to 14, wherein the second gas is directed in the chamber at a flow rate in the range 2 to 10 sccm.