SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a base wafer;
a first semiconductor crystal layer positioned above the base wafer;
a second semiconductor crystal layer positioned above a partial area of the first semiconductor crystal layer;
a first MISFET having a channel formed in a part of an area of the first semiconductor crystal layer above which the second semiconductor crystal layer does not exist and having a first source and a first drain; and
a second MISFET having a channel formed in a part of the second semiconductor crystal layer and having a second source and a second drain, whereinthe first MISFET is a first-cannel-type MISFET and the second MISFET is a second-channel-type MISFET, the second-channel-type being different from the first-channel-type,the first source and the first drain are made of a compound having an atom constituting the first semiconductor crystal layer and a nickel atom, a compound having an atom constituting the first semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the first semiconductor crystal layer, a nickel atom, and a cobalt atom, andthe second source and the second drain are made of a compound having an atom constituting the second semiconductor crystal layer and a nickel atom, a compound having an atom constituting the second semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the second semiconductor crystal layer, a nickel atom, and a cobalt atom.
1 Assignment
0 Petitions
Accused Products
Abstract
There is provided a semiconductor device including: a first source and a first drain of a first-channel-type MISFET formed on a first semiconductor crystal layer, which are made of a compound having an atom constituting the first semiconductor crystal layer and a nickel atom, a compound having an atom constituting the first semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the first semiconductor crystal layer, a nickel atom, and a cobalt atom; and a second source and a second drain of a second-channel-type MISFET formed on a second semiconductor crystal layer, which are made of a compound having an atom constituting the second semiconductor crystal layer and a nickel atom, a compound having an atom constituting the second semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the second semiconductor crystal layer, a nickel atom, and a cobalt atom.
-
Citations
26 Claims
-
1. A semiconductor device comprising:
-
a base wafer; a first semiconductor crystal layer positioned above the base wafer; a second semiconductor crystal layer positioned above a partial area of the first semiconductor crystal layer; a first MISFET having a channel formed in a part of an area of the first semiconductor crystal layer above which the second semiconductor crystal layer does not exist and having a first source and a first drain; and a second MISFET having a channel formed in a part of the second semiconductor crystal layer and having a second source and a second drain, wherein the first MISFET is a first-cannel-type MISFET and the second MISFET is a second-channel-type MISFET, the second-channel-type being different from the first-channel-type, the first source and the first drain are made of a compound having an atom constituting the first semiconductor crystal layer and a nickel atom, a compound having an atom constituting the first semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the first semiconductor crystal layer, a nickel atom, and a cobalt atom, and the second source and the second drain are made of a compound having an atom constituting the second semiconductor crystal layer and a nickel atom, a compound having an atom constituting the second semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the second semiconductor crystal layer, a nickel atom, and a cobalt atom. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
-
Specification