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SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

  • US 20140091393A1
  • Filed: 12/06/2013
  • Published: 04/03/2014
  • Est. Priority Date: 06/10/2011
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a base wafer;

    a first semiconductor crystal layer positioned above the base wafer;

    a second semiconductor crystal layer positioned above a partial area of the first semiconductor crystal layer;

    a first MISFET having a channel formed in a part of an area of the first semiconductor crystal layer above which the second semiconductor crystal layer does not exist and having a first source and a first drain; and

    a second MISFET having a channel formed in a part of the second semiconductor crystal layer and having a second source and a second drain, whereinthe first MISFET is a first-cannel-type MISFET and the second MISFET is a second-channel-type MISFET, the second-channel-type being different from the first-channel-type,the first source and the first drain are made of a compound having an atom constituting the first semiconductor crystal layer and a nickel atom, a compound having an atom constituting the first semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the first semiconductor crystal layer, a nickel atom, and a cobalt atom, andthe second source and the second drain are made of a compound having an atom constituting the second semiconductor crystal layer and a nickel atom, a compound having an atom constituting the second semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the second semiconductor crystal layer, a nickel atom, and a cobalt atom.

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