Gate Dielectric Of Semiconductor Device
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Abstract
A method of fabricating a semiconductor device having a different gate structure in each of a plurality of device regions is described. The method may include a replacement gate process. The method includes forming a hard mask layer on oxide layers formed on one or more regions of the substrate. A high-k gate dielectric layer is formed on each of the first, second and third device regions. The high-k gate dielectric layer may be formed directly on the hard mask layer in a first and second device regions and directly on an interfacial layer formed in a third device region. A semiconductor device including a plurality of devices (e.g., transistors) having different gate dielectrics formed on the same substrate is also described.
5 Citations
20 Claims
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1-16. -16. (canceled)
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17. A semiconductor device, comprising:
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a semiconductor substrate; a first gate structure formed on the semiconductor substrate, wherein the first gate structure includes a first oxide layer, a nitride layer on the oxide layer, and a high-k dielectric layer on the nitride layer; a second gate structure formed on the semiconductor device, wherein the second gate structure includes a second oxide layer, the nitride layer on the oxide layer, and the high-k dielectric layer disposed on the nitride layer; and a third gate structure formed on the semiconductor substrate, wherein the third gate structure includes an interfacial layer and the high-k dielectric layer disposed on the interfacial layer. - View Dependent Claims (18, 19, 20)
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Specification