HYBRID INTEGRATED PRESSURE SENSOR COMPONENT

• US 20140091405A1
• Filed: 10/02/2013
• Published: 04/03/2014
• Est. Priority Date: 10/02/2012
• Status: Active Grant

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: WEBER, Heribert
• Granted Patent: US 8,779,536 B2
• Time in Patent Office: Days
• US Class Current: 257/415
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 3/0021 Transducers for transforming electrical into mechanical energy or vice versa dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0714 Forming the micromechanical structure with a CMOS process
• CPC Class Codes: B81C 2203/0771 Stacking the electronic processing unit and the micromechanical structure
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A pressure sensor component includes a MEMS component having at least one pattern element that is able to be deflected perpendicular to the component plane, which is equipped with at least one electrode of a measuring capacitor device, and an ASIC component having integrated circuit elements and at least one back end stack, at least one counter-electrode of the measuring capacitor device being developed in a metallization plane of the back end stack. The MEMS component is mounted on the back end pile of the ASIC component. The MEMS component includes at least one pressure-sensitive diaphragm pattern and is mounted on the ASIC component in such a way that the pressure-sensitive diaphragm pattern spans a cavity between the MEMS component and the back end stack of the ASIC component.

Claims

1. A hybrid integrated pressure sensor component, comprising:

a MEMS component having at least one pattern element that is deflectable perpendicular to a component plane and equipped with at least one electrode of a measuring capacitor device; and

an ASIC component having integrated circuit elements and at least one back end stack, at least one counter-electrode of the measuring capacitor device being developed in a metallization plane of the back end stack, wherein;

the MEMS component is mounted on the back end stack of the ASIC component,

the MEMS component includes at least one pressure-sensitive diaphragm pattern,

the MEMS component is mounted on the ASIC component in such a way that the pressure-sensitive diaphragm pattern spans a cavity between the MEMS component and the back end stack of the ASIC component,

the pressure-sensitive diaphragm pattern includes a diaphragm element and at least one electrode carrier,

the diaphragm element closes the cavity on an MEMS side, and

the at least one electrode carrier is situated within the cavity and is connected mechanically to the diaphragm element in such a way that a pressure-conditioned deformation of the diaphragm element effects a deflection of the at least one electrode carrier essentially perpendicular to a diaphragm plane, but no deformation of the at least one electrode carrier itself

2. The pressure sensor component as recited in claim 1, wherein the at least one electrode carrier is implemented as a planar pattern element oriented essentially parallel to the diaphragm element.

3. The pressure sensor component as recited in claim 1, wherein:

the at least one electrode carrier is connected point by point to the diaphragm element, and

at least one connecting point is developed in a center region of the diaphragm element.

4. The pressure sensor component as recited in claim 1, wherein:

the at least one electrode carrier is connected via a plurality of connection points to the diaphragm element, and

the connection points are situated essentially on a same level of the deflected diaphragm element.

5. The pressure sensor component as recited in claim 1, wherein a center section of the diaphragm element is reinforced.

6. The pressure sensor component as recited in claim 1, further comprising:

at least two capacitor devices developed in an area of the cavity on the at least one electrode carrier and the back end stack, so that in addition to a deflection perpendicular to the diaphragm plane, one of a tilting and a bending of the at least one electrode carrier is also detected.

7. The pressure sensor component as recited in claim 1, wherein the cavity has at least one pressure connection.

8. The pressure sensor component as recited in claim 7, wherein:

in the ASIC component the at least one pressure connection to the cavity is developed, and

in the metallization plane of the back end stack a grid pattern is developed in an area of the pressure connection.

9. The pressure sensor component as recited in claim 1, wherein:

the ASIC component is provided with a back end stack on a back side,

a second MEMS component having a pressure-sensitive diaphragm pattern is mounted on the back side back end stack in such a way that the pressure-sensitive diaphragm pattern spans a second cavity between the second MEMS component and the back side back end stack, the diaphragm pattern of the second MEMS component being equipped with at least one electrode of a measuring capacitor device, and

at least one counter-electrode of the measuring capacitor device is developed in a metallization plane of the back side back end stack of the ASIC component.

10. The pressure sensor component as recited in claim 9, wherein:

a pressure connection between the two cavities exists, and

the diaphragm patterns of the two MEMS components are mechanically connected.

11. The pressure sensor component as recited in claim 1, wherein:

at least the diaphragm element of the diaphragm pattern is developed in a monocrystalline silicon of one of a silicon wafer and an SOI wafer, and

at least one electrode of the diaphragm pattern is implemented as a doped region of the at least one electrode carrier.