FILM FORMING METHOD AND FILM FORMING APPARATUS

• US 20140094027A1
• Filed: 10/02/2013
• Published: 04/03/2014
• Est. Priority Date: 10/03/2012
• Status: Active Grant

• Current Assignee: Osaka University, Tokyo Electron Limited
• Original Assignee: Osaka University, Tokyo Electron Limited
• Inventors: AZUMO, Shuji, KASHIWAGI, Yusaku, MOROZUMI, Yuichiro, WAMURA, Yu, HARADA, Katsushige, TAKAHASHI, Kosuke, WATANABE, Heiji, SHIMURA, Takayoshi, HOSOI, Takuji
• Granted Patent: US 9,293,543 B2
• Time in Patent Office: Days
• US Class Current: 438/591
• CPC Class Codes: C23C 16/303 Nitrides
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02252 formation by plasma treatment, e.g. plasma oxidation of the substrate after treatment of an insulating film by plasma H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02326 into a nitride layer, e.g. changing SiN to SiON
• CPC Class Codes: H01L 21/02332 into an oxide layer, e.g. changing SiO to SiON
• CPC Class Codes: H01L 21/044 Conductor-insulator-semiconductor electrodes
• CPC Class Codes: H01L 21/049 Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
• CPC Class Codes: H01L 21/28264 the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
• CPC Class Codes: H01L 29/1602 Diamond
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/401 Multistep manufacturing processes
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/66045 Field-effect transistors
• CPC Class Codes: H01L 29/66068 : the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
• CPC Class Codes: H01L 29/66712 : Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/66734 : with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7802 : Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7813 : with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

Claims

1. A method of forming a gate insulating film for use in a MOSFET for a power device, the method comprising:

forming an AlN film;

forming an AlO film; and

repeating the forming the AlN film and the forming the AlO film, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated.

2. The method of claim 1, wherein the film thickness of the AlON film is 50 nm or more.

3. The method of claim 1, wherein the AlON film is formed on a substrate and the substrate includes any one of silicon carbonate, gallium nitride and diamond.

4. The method of claim 1, wherein a heat treatment is performed on the AlON film having the laminated structure.

5. The method of claim 1, wherein the AlN film formed at the very first among the AlN films is formed before the AlO film formed at the very first among the AlO films.

6. The method of claim 1, wherein the formation of the AlN film and/or the formation of the AlO film are performed by ALD, CVD or PVD.

7. A method of forming a gate insulating film for use in a MOSFET for a power device, the method comprising:

forming an AlN film;

oxidizing the AlN film after the AlN film is formed; and

repeating the forming the AlN film and the oxidizing the AlN film alternately, thereby forming an AlON film having a laminated structure in which oxidized AlN films are laminated.

8. The method of claim 7, wherein the film thickness of the AlON film is 50 nm or more.

9. The method of claim 7, wherein the AlON film is formed on a substrate and the substrate includes any one of silicon carbonate, gallium nitride and diamond.

10. The method of claim 7, wherein a heat treatment is performed on the AlON film having the laminated structure.

11. The method of claim 7, wherein the formation of the AlN film is performed by ALD, CVD or PVD.

12. The method of forming a gate insulating film for use in a MOSFET for a power device, the method comprising:

forming an AlO film;

nitriding the AlO film after the AlO film is formed; and

repeating the forming the AlO film and the nitriding the AlO film alternately, thereby forming an AlON film having a laminated structure in which nitrided AlO films are laminated.

13. The method of claim 12, the film thickness of the AlON film is 50 nm or more.

14. The method of claim 12, wherein the AlON film is formed on a substrate and the substrate includes any of silicon carbonate, gallium nitride and diamond.

15. The method of claim 12, wherein a heat treatment is performed on the AlON film having the laminated structure.

16. The method of claim 12, wherein the formation of the AlO film is performed by ALD, CVD or PVD.

17. A film forming apparatus comprising:

a film forming unit configured to form an AlN film and an AlO film,

wherein the film forming unit repeats a formation of the AlN film and a formation of the AlO film, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated.

18. A film forming apparatus comprising:

a film forming unit configured to form an AlN film; and

an oxidation unit configured to oxidize the AlN film after the AlN film is formed,

wherein the film forming unit and the oxidation unit repeat the formation of the AlN film and the oxidation of the AlN film alternately, thereby forming an AlON film having a laminated structure in which oxidized AlN films are laminated.

19. A film forming apparatus comprising:

a film forming unit configured to form an AlO film; and

a nitridation unit configured to nitride the AlO film after the AlO film is formed,

wherein the film forming unit and the nitridation unit repeat the formation of the AlO film and the nitridation of the AlO film, thereby forming an AlON film having a laminated structure in which nitrided AlO films are laminated.