NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME

• US 20140097456A1
• Filed: 10/08/2013
• Published: 04/10/2014
• Est. Priority Date: 10/09/2012
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Kawashima, Takeshi
• Granted Patent: US 9,287,454 B2
• Time in Patent Office: Days
• US Class Current: 257/94
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/325 characterised by the doping materials
• CPC Class Codes: H01S 2301/17 Semiconductor lasers comprising special layers
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 2304/04 MOCVD or MOVPE
• CPC Class Codes: H01S 5/11 Comprising a photonic bandgap structure
• CPC Class Codes: H01S 5/12 the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/3063 using Mg
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A method for producing a light-emitting device includes the steps of: forming a layer containing In on a substrate in a reactor in which a Mg-containing raw material has been used; and forming an active layer including a nitride semiconductor on the layer containing In.

Claims

1. A method for producing a light-emitting device including an active layer comprising a nitride semiconductor, the method comprising the steps of:

forming a layer containing In on a substrate in a reactor in which a Mg-containing raw material has been used; and

forming an active layer comprising a nitride semiconductor on the layer containing In.

2. The method for producing a light-emitting device according to claim 1,

wherein the layer containing In has a thickness of 30 nm or more.

3. The method for producing a light-emitting device according to claim 1,

wherein the layer containing In has a thickness of 1,000 nm or less.

4. The method for producing a light-emitting device according to claim 1,

wherein the layer containing In has a larger band gap than the active layer.

5. The method for producing a light-emitting device according to claim 4,

wherein the layer containing In comprises In_xGa_1-xN and the active layer comprises In_yGa_1-yN, where 0<

x<

y.

6. The method for producing a light-emitting device according to claim 1,

further comprising a step of heat-treating the reactor before the substrate is carried into the reactor.

7. A method for producing a plurality of light-emitting devices, each light-emitting device including an active layer comprising a nitride semiconductor and a Mg-doped p-type semiconductor layer, the method comprising the steps of:

forming a layer containing In on a substrate;

forming an active layer comprising a nitride semiconductor on the layer containing In; and

forming a Mg-doped p-type semiconductor layer on the active layer,

the steps being repeated in this order.

8. The method for producing a plurality of light-emitting devices according to claim 7,

wherein the layer containing In has a thickness of 30 nm or more.

9. The method for producing a plurality of light-emitting devices according to claim 7,

wherein the layer containing In has a thickness of 1,000 nm or less.

10. The method for producing a plurality of light-emitting devices according to claim 7,

wherein the layer containing In has a larger band gap than the active layer.

11. The method for producing a plurality of light-emitting devices according to claim 10,

wherein the layer containing In comprises In_xGa_1-xN and the active layer comprises In_yGa_1-yN, where 0<

x<

y.

12. The method for producing a plurality of light-emitting devices according to claim 7,

further comprising a step of heat-treating a reactor before the substrate is carried into the reactor.

13. A light-emitting device comprising:

a layer containing In and Mg on a substrate;

an active layer comprising a nitride semiconductor on the layer containing In and Mg; and

a Mg-doped p-type semiconductor layer on the active layer.

14. The light-emitting device according to claim 13,

wherein a Mg concentration in the layer containing In and Mg decreases from the substrate side to the active-layer side.

15. The light-emitting device according to claim 13,

wherein the layer containing In and Mg has a thickness of 30 nm or more.

16. The light-emitting device according to claim 13,

wherein the layer containing In and Mg has a thickness of 1,000 nm or less.

17. The light-emitting device according to claim 13,

wherein the layer containing In and Mg comprises In_xGa_1-xN and the active layer comprises In_yGa_1-yN, where 0<

x<

y.