SYSTEMS AND METHODS FOR COLOR BINNING

• US 20140098267A1
• Filed: 08/26/2013
• Published: 04/10/2014
• Est. Priority Date: 10/30/2009
• Status: Active Grant

• Current Assignee: InVisage Technologies, Inc. (Apple Inc.)
• Original Assignee: InVisage Technologies, Inc. (Apple Inc.)
• Inventors: Tian, Hui, Lee, Jess Jan Young, Della Nave, Pierre Henri Rene
• Granted Patent: US 9,538,102 B2
• Time in Patent Office: Days
• US Class Current: 348/272
• CPC Class Codes: H04N 2209/047 using multispectral pick-up elements
• CPC Class Codes: H04N 23/11 for generating image signals from visible and infrared light wavelengths
• CPC Class Codes: H04N 25/131 including elements passing infrared wavelengths
• CPC Class Codes: H04N 25/134 based on three different wavelength filter elements
• CPC Class Codes: H04N 25/135 based on four or more different wavelength filter elements
• CPC Class Codes: H04N 25/46 by combining or binning pixels
• CPC Class Codes: H04N 25/57 Control of the dynamic range
• CPC Class Codes: H04N 25/60 Noise processing, e.g. detecting, correcting, reducing or removing noise
• CPC Class Codes: H04N 25/70 SSIS architectures; Circuits associated therewith
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors

Abstract

In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.

Claims

1. An image sensor comprising:

an array of subpixels comprising photosensitive material;

circuitry configured to operate in a first selectable mode to read out signals from the individual subpixels of photosensitive material;

circuitry configured to operate in a second selectable mode to read out a binned signal for a plurality of subpixel regions corresponding to the same waveband with a higher sensitivity than the first mode; and

circuitry configured to operate in a third selectable mode to read out a binned signal for a plurality of subpixel regions corresponding to the same waveband with a higher dynamic range than the second mode.

2. The image sensor of claim 1, wherein:

the circuitry configured to operate in the second mode integrates the binned signal using a first capacitance; and

the circuitry configured to operate in the third mode integrates the binned signal using a second capacitance greater than the first capacitance.

3. The image sensor of claim 2, wherein the circuitry configured to operate in the first mode integrates the signal for each subpixel using a capacitance equal to the first capacitance.

4. An image sensor comprising:

an array of subpixels comprising photosensitive material;

circuitry configured to operate in a first selectable mode to read out signals from the individual subpixels of photosensitive material; and

circuitry configured to operate in a second selectable mode to read out a binned signal for a plurality of subpixel regions corresponding to a first color waveband and to read out unbinned signals for a plurality of subpixel regions corresponding to a second color waveband.

5. The image sensor of claim 4, wherein the circuitry configured to operate in a second selectable mode reads out unbinned signals for a plurality of subpixel regions corresponding to a third color waveband.