SEMICONDUCTOR TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING SAME
First Claim
1. A semiconductor device comprising:
- a drift layer of a first conductivity type;
a base layer of a second conductivity type provided on the drift layer;
a source layer of a first conductivity type selectively provided on a surface of the base layer;
a gate electrode provided via a gate insulating film in a trench penetrating the source layer and the base layer to reach the drift layer;
a pillar-shaped semiconductor layer of a second conductive type connected to the base layer and provided from a surface to an inside of the drift layer;
a drain electrode electrically connected to the drift layer; and
a source electrode electrically connected to the source layer, wherein;
an impurity concentration of the first conductivity type contained in the base layer is lower than an impurity concentration of the first conductivity type contained in the drift layer; and
the impurity concentration of the first conductivity type contained in the drift layer is not less than 1×
1016 (atoms/cm3).
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Accused Products
Abstract
According to one embodiment, a semiconductor device includes a drift layer. The device includes a base layer. The device includes a source layer selectively provided on a surface of the base layer. The device includes a gate electrode provided via a gate insulating film in a trench penetrating the source layer and the base layer to reach the drift layer. The device includes a field plate electrode provided under the gate electrode in the trench. The device includes a drain electrode electrically connected to the drift layer. The device includes a source electrode. The field plate electrode is electrically connected to the source electrode. An impurity concentration of a first conductivity type contained in the base layer is lower than an impurity concentration of the first conductivity type contained in the drift layer. And the impurity concentration of the first conductivity type contained in the drift layer is not less than 1×1016 (atoms/cm3).
3 Citations
4 Claims
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1. A semiconductor device comprising:
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a drift layer of a first conductivity type; a base layer of a second conductivity type provided on the drift layer; a source layer of a first conductivity type selectively provided on a surface of the base layer; a gate electrode provided via a gate insulating film in a trench penetrating the source layer and the base layer to reach the drift layer; a pillar-shaped semiconductor layer of a second conductive type connected to the base layer and provided from a surface to an inside of the drift layer; a drain electrode electrically connected to the drift layer; and a source electrode electrically connected to the source layer, wherein; an impurity concentration of the first conductivity type contained in the base layer is lower than an impurity concentration of the first conductivity type contained in the drift layer; and the impurity concentration of the first conductivity type contained in the drift layer is not less than 1×
1016 (atoms/cm3). - View Dependent Claims (2, 3, 4)
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Specification