Power Quad Flat No-Lead (PQFN) Package Having Bootstrap Diodes on a Common Integrated Circuit (IC)

• US 20140103514A1
• Filed: 12/24/2013
• Published: 04/17/2014
• Est. Priority Date: 12/13/2010
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Fernando, Dean, Barbosa, Roel, Takahashi, Toshio
• Granted Patent: US 9,443,795 B2
• Time in Patent Office: Days
• US Class Current: 257/676
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4903 Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/49513 having bonding material between chip and die pad
• CPC Class Codes: H01L 23/4952 the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49541 Geometry of the lead-frame
• CPC Class Codes: H01L 23/49548 : Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13064 : High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18301 : being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

According to an exemplary implementation, a power quad flat no-lead (PQFN) package includes a multi-phase inverter situated on a leadframe. The PQFN package further includes drivers situated on the leadframe and configured to drive the multi-phase inverter. The PQFN package also includes bootstrap diodes respectively coupled to the drivers. The bootstrap diodes are in a common integrated circuit (IC) that is situated on the leadframe. The common IC can include the drivers. The drivers can be high side drivers that are coupled to high side power switches of the multi-phase inverter. Also, the bootstrap diodes can be coupled to a supply voltage terminal of the PQFN package. Furthermore, the PQFN package can include wirebonds coupling the common IC to bootstrap supply voltage terminals of the PQFN package.

Claims

1. A power quad flat no-lead (PQFN) package comprising:

a multi-phase inverter situated on a leadframe;

drivers situated on said leadframe and configured to drive said multi-phase inverter;

bootstrap diodes respectively coupled to said drivers, said bootstrap diodes being in a common integrated circuit (IC) that is situated on said leadframe.

2. The PQFN package of claim 1, wherein said common IC includes said drivers.

3. The PQFN package of claim 1, wherein said drivers are high side drivers and are coupled to a high side power switch of said multi-phase inverter.

4. The PQFN package of claim 1, wherein said bootstrap diodes are coupled to a supply voltage terminal of said PQFN package.

5. The PQFN package of claim 1, comprising wirebonds coupling said common IC to bootstrap supply voltage terminals of said PQFN package.

6. The PQFN package of claim 1, wherein at least one of said drivers is coupled to an output node of said multi-phase inverter, said output node being situated on a first leadframe strip of said leadframe.

7. The PQFN package of claim 1, wherein at least one of said drivers is coupled to an output node of said multi-phase inverter, said output node being situated on a first leadframe island of said leadframe.

8. The PQFN package of claim 1, wherein said multi-phase inverter comprises high side power switches that are situated on a common die pad of said leadframe.

9. The PQFN package of claim 8, wherein said high side power switches comprise group III-V transistors.

10. The PQFN package of claim 1, wherein said PQFN package has a footprint of greater than 12 mm by 12 mm.

11. The PQFN package of claim 1, wherein said PQFN package has a footprint of less than 12 mm by 12 mm.

12. A power quad flat no-lead (PQFN) package comprising:

a multi-phase inverter situated on a leadframe;

a driver integrated circuit (IC) situated on said leadframe and configured to drive said multi-phase inverter;

a plurality of bootstrap diodes configured for connection to respective bootstrap capacitors, said plurality of bootstrap diodes being in said driver IC.

13. The PQFN package of claim 12, wherein driver IC is configured to drive high side power switches of said multi-phase inverter.

14. The PQFN package of claim 12, wherein said bootstrap diodes are coupled to a supply voltage terminal of said PQFN package.

15. The PQFN package of claim 12, comprising wirebonds coupling said driver IC to bootstrap supply voltage terminals of said PQFN package.

16. The PQFN package of claim 12, wherein said driver IC is coupled to an output node of said multi-phase inverter, said output node being situated on a first leadframe strip of said leadframe.

17. The PQFN package of claim 12, wherein said driver IC is coupled to an output node of said multi-phase inverter, said output node being situated on a first leadframe island of said leadframe.

18. The PQFN package of claim 12, wherein said multi-phase inverter comprises high side power switches that are situated on a common die pad of said leadframe.

19. A power quad flat no-lead (PQFN) package comprising:

U-phase, V-phase, and W-phase power switches situated on a leadframe;

U-phase, V-phase, and W-phase drivers situated on said leadframe and respectively coupled to said U-phase, V-phase, and W-phase power switches;

U-phase, V-phase, and W-phase bootstrap diodes respectively coupled to said U-phase, V-phase, and W-phase drivers, said U-phase, V-phase, and W-phase bootstrap diodes being in a common integrated circuit (IC) that is situated on said leadframe.

20. The PQFN package of claim 19, wherein said common IC includes said U-phase, V-phase, and W-phase drivers.