SEMICONDUCTOR POWER MODULES AND DEVICES
First Claim
1. A half bridge, comprising:
- a first switch encased in a first package, the first package comprising a first conductive portion having a first area, the first transistor being mounted over the first conductive portion;
a second transistor encased in a second package, the second package comprising a second conductive portion having a second area, the second transistor being mounted over the second conductive portion; and
a substrate comprising an insulating layer and a metal layer;
whereinthe first package is on a first side of the substrate and the second package is on a second side of the substrate; and
the first package is opposite the second package, with at least 50% of the first area of the first conductive portion being opposite the second area of the second conductive portion.
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Accused Products
Abstract
An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a second transistor encased in a second package, the second transistor being mounted over a second conductive portion of the second package. The component further includes a substrate comprising an insulating layer between a first metal layer and a second metal layer. The first package is on one side of the substrate with the first conductive portion being electrically connected to the first metal layer, and the second package is on another side of the substrate with the second conductive portion being electrically connected to the second metal layer. The first package is opposite the second package, with at least 50% of a first area of the first conductive portion being opposite a second area of the second conductive portion.
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Citations
31 Claims
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1. A half bridge, comprising:
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a first switch encased in a first package, the first package comprising a first conductive portion having a first area, the first transistor being mounted over the first conductive portion; a second transistor encased in a second package, the second package comprising a second conductive portion having a second area, the second transistor being mounted over the second conductive portion; and a substrate comprising an insulating layer and a metal layer;
whereinthe first package is on a first side of the substrate and the second package is on a second side of the substrate; and the first package is opposite the second package, with at least 50% of the first area of the first conductive portion being opposite the second area of the second conductive portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A half bridge, comprising:
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a capacitor comprising an insulating layer between a first conductive portion and a second conductive portion, the first conductive portion having a first area and the second conductive portion having a second area; a first transistor encased in a first package, the first package comprising the first conductive portion; and a second transistor encased in a second package, the second package comprising the second conductive portion;
whereinthe first package is on a first side of the insulating layer and the second package is on a second side of the insulating layer. - View Dependent Claims (15, 16, 17)
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18. A method of operating a half bridge circuit comprising a first switch encased in a first package and a second switch encased in a second package, the first switch and the second switch being on opposite sides of an insulating layer, the method comprising:
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biasing a drain of the first switch at a voltage of at least 300 Volts relative to a source of the second switch; biasing the first switch on and biasing the second switch off, thereby causing a current of at least 3 Amps to flow through the first switch and causing the second switch to block a voltage; and at a first time switching the first switch off, causing the current to flow through the second switch and causing the first switch to block a voltage;
whereinthe switching of the first switch comprises hard-switching of the first switch at a switching rate of at least 100 Volts/nanosecond. - View Dependent Claims (19, 20, 21, 22, 23)
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24. A half bridge configured to be connected to an electrical load, the half bridge comprising:
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a first switch encased in a first package and a second switch encased in a second package, the first switch comprising a first source and the second switch comprising a second drain, the first source being electrically connected to the second drain;
whereinthe first switch and the second switch are on opposite sides of a metal mount; and the half bridge is operable to hard-switch a voltage of at least 300 Volts across the electrical load at a switching rate of at least 100 Volts/nanosecond while a current of at least 3 Amps flows through the electrical load. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31)
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Specification