SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor layer comprising indium over a substrate;
forming a first insulating layer comprising oxygen over the oxide semiconductor layer; and
forming a gate electrode over the first insulating layer,wherein the first insulating layer is formed under a pressure higher than or equal to 100 Pa and lower than or equal to 300 Pa.
1 Assignment
0 Petitions
Accused Products
Abstract
Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced.
15 Citations
21 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer comprising indium over a substrate; forming a first insulating layer comprising oxygen over the oxide semiconductor layer; and forming a gate electrode over the first insulating layer, wherein the first insulating layer is formed under a pressure higher than or equal to 100 Pa and lower than or equal to 300 Pa. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide stack over a substrate; forming a first insulating layer comprising oxygen over the oxide stack; and forming a gate electrode over the first insulating layer, wherein the oxide stack comprises; a first oxide layer comprising indium over the substrate; an oxide semiconductor layer comprising indium over the first oxide layer; and a second oxide layer comprising indium over the oxide semiconductor layer, wherein the first insulating layer is formed under a pressure higher than or equal to 100 Pa and lower than or equal to 300 Pa. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification