SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising a transistor, the transistor comprising:
- a gate electrode over a substrate;
a gate insulating film over the gate electrode;
a multilayer film over the gate insulating film;
a pair of electrodes in electrical contact with the multilayer film;
a first oxide insulating film over the multilayer film and the pair of electrodes; and
a second oxide insulating film over the first oxide insulating film,wherein the multilayer film includes an oxide semiconductor film and an oxide film which contains at least one of In and Ga,wherein the oxide semiconductor film has an amorphous structure or a microcrystalline structure, andwherein the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.
1 Assignment
0 Petitions
Accused Products
Abstract
In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.
45 Citations
20 Claims
-
1. A semiconductor device comprising a transistor, the transistor comprising:
-
a gate electrode over a substrate; a gate insulating film over the gate electrode; a multilayer film over the gate insulating film; a pair of electrodes in electrical contact with the multilayer film; a first oxide insulating film over the multilayer film and the pair of electrodes; and a second oxide insulating film over the first oxide insulating film, wherein the multilayer film includes an oxide semiconductor film and an oxide film which contains at least one of In and Ga, wherein the oxide semiconductor film has an amorphous structure or a microcrystalline structure, and wherein the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A semiconductor device comprising a transistor, the transistor comprising:
-
a gate electrode over a substrate; a gate insulating film over the gate electrode; a multilayer film over the gate insulating film; a pair of electrodes in electrical contact with the multilayer film; a first oxide insulating film over the multilayer film and the pair of electrodes; and a second oxide insulating film over the first oxide insulating film, wherein the multilayer film includes an oxide semiconductor film and an oxide film which contains at least one of In and Ga over the oxide semiconductor film, wherein the oxide semiconductor film has an amorphous structure or a microcrystalline structure, wherein the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and wherein the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
-
-
18. A method for manufacturing a semiconductor device, comprising the steps of:
-
forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a multilayer film including an oxide semiconductor film having an amorphous structure or a microcrystalline structure and an oxide film containing at least one of In and Ga, over the gate insulating film; forming a pair of electrodes in electrical contact with the multilayer film; forming a first oxide insulating film over the multilayer film and the pair of electrodes; and forming a second oxide insulating film over the first oxide insulating film, wherein the step of forming the first oxide insulating film comprises the steps of; placing the substrate in a treatment chamber which is vacuum-evacuated and held at temperatures higher than or equal to 180°
C. and lower than or equal to 400°
C.; andsetting a pressure in the treatment chamber to be greater than or equal to 20 Pa and less than or equal to 250 Pa with introduction of a first source gas into the treatment chamber, and wherein the step of forming the second oxide insulating film comprises the steps of; placing the substrate in a treatment chamber which is vacuum-evacuated and held at temperatures higher than or equal to 180°
C. and lower than or equal to 260°
C.;setting a pressure in the treatment chamber to be greater than or equal to 100 Pa and less than or equal to 250 Pa with introduction of a second source gas into the treatment chamber; and supplying a frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 to an electrode provided in the treatment chamber. - View Dependent Claims (19, 20)
-
Specification