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Apparatus and Method for Forming Semiconductor Contacts

  • US 20140110755A1
  • Filed: 10/24/2012
  • Published: 04/24/2014
  • Est. Priority Date: 10/24/2012
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a substrate formed of a first material;

    an isolation region formed in a substrate;

    a fin structure formed over the substrate, wherein the fin structure is formed of a second material, and wherein the fin structure protrudes above a top surface of the isolation region, and wherein the fin structure comprises;

    a channel connected between a first drain/source region and a second drain/source region;

    a gate electrode wrapping the channel of the fin structure;

    a first barrier-less contact region formed over the first drain/source region; and

    a first metal contact formed over the first barrier-less contact region.

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