SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a first hetero-junction body in which a first nitride semiconductor layer and a second nitride semiconductor layer having a greater band gap than that of the first nitride semiconductor layer are bonded together;
a second hetero-junction body in which a third nitride semiconductor layer formed on the first hetero-junction body and a fourth nitride semiconductor layer having a greater band gap than that of the third nitride semiconductor layer are bonded together;
a first electrode in Schottky contact with at least the fourth nitride semiconductor layer; and
a second electrode in ohmic contact with the first and second hetero-junction bodies,wherein the first nitride semiconductor layer has such a thickness that an electron concentration in a 2-dimentional electron gas layer formed in the first nitride semiconductor layer is not reduced, orthe third nitride semiconductor layer has such a thickness that an electron concentration in a 2-dimentional electron gas layer formed in the third nitride semiconductor layer is not reduced.
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Abstract
A semiconductor device includes a first hetero-junction body in which a first channel layer and a first barrier layer are bonded together; a second hetero-junction body in which a second channel layer formed on the first hetero-junction body and a second barrier layer are bonded together; a gate electrode in Schottky contact with the second barrier layer; and source and drain electrodes in ohmic contact with the first and second hetero-junction bodies. At least one of the first and second channel layers has such a thickness that an electron concentration in a 2DEG layer formed in the channel layer is not reduced.
31 Citations
8 Claims
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1. A semiconductor device comprising:
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a first hetero-junction body in which a first nitride semiconductor layer and a second nitride semiconductor layer having a greater band gap than that of the first nitride semiconductor layer are bonded together; a second hetero-junction body in which a third nitride semiconductor layer formed on the first hetero-junction body and a fourth nitride semiconductor layer having a greater band gap than that of the third nitride semiconductor layer are bonded together; a first electrode in Schottky contact with at least the fourth nitride semiconductor layer; and a second electrode in ohmic contact with the first and second hetero-junction bodies, wherein the first nitride semiconductor layer has such a thickness that an electron concentration in a 2-dimentional electron gas layer formed in the first nitride semiconductor layer is not reduced, or the third nitride semiconductor layer has such a thickness that an electron concentration in a 2-dimentional electron gas layer formed in the third nitride semiconductor layer is not reduced. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification