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SEMICONDUCTOR DEVICE

  • US 20140110759A1
  • Filed: 12/24/2013
  • Published: 04/24/2014
  • Est. Priority Date: 07/01/2011
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a first hetero-junction body in which a first nitride semiconductor layer and a second nitride semiconductor layer having a greater band gap than that of the first nitride semiconductor layer are bonded together;

    a second hetero-junction body in which a third nitride semiconductor layer formed on the first hetero-junction body and a fourth nitride semiconductor layer having a greater band gap than that of the third nitride semiconductor layer are bonded together;

    a first electrode in Schottky contact with at least the fourth nitride semiconductor layer; and

    a second electrode in ohmic contact with the first and second hetero-junction bodies,wherein the first nitride semiconductor layer has such a thickness that an electron concentration in a 2-dimentional electron gas layer formed in the first nitride semiconductor layer is not reduced, orthe third nitride semiconductor layer has such a thickness that an electron concentration in a 2-dimentional electron gas layer formed in the third nitride semiconductor layer is not reduced.

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