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SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20140112049A1
  • Filed: 03/14/2013
  • Published: 04/24/2014
  • Est. Priority Date: 10/22/2012
  • Status: Active Grant
First Claim
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1. A semiconductor memory device, comprising:

  • insulation patterns and cell word lines alternately stacked on a substrate;

    cell channel layers formed through the insulation patterns and the cell word lines;

    select channel layers connected to the cell channel layers, the select channel layers each having a resistance higher than a resistance of each of the cell channel layers; and

    select lines surrounding the select channel layers.

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