SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20140117310A1
• Filed: 01/06/2014
• Published: 05/01/2014
• Est. Priority Date: 08/09/2007
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: KANG, Dae Sung, SON, Hyo Kun
• Granted Patent: US 8,946,677 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.

Claims

1. A semiconductor light emitting device, comprising:

a substrate;

a first semiconductor layer including an n-type dopant on the substrate;

an active layer having a multiple quantum well structure on the first semiconductor layer;

a nitride-based semiconductor layer disposed between the active layer and the first semiconductor layer;

a second semiconductor layer disposed on a top surface of the active layer;

a third semiconductor layer on a top surface of the second semiconductor layer;

a fourth semiconductor layer on a top surface of the third semiconductor layer;

a first electrode on the first semiconductor layer; and

a second electrode on the fourth semiconductor layer,

wherein the second to fourth semiconductor layers include a p-type dopant,

wherein the second and fourth semiconductor layers is formed of a p-type semiconductor layer,

wherein the p-type semiconductor layer formed of the second semiconductor layer is formed of an InAlGaN semiconductor,

wherein the third semiconductor layer is disposed between the top surface of the second semiconductor layer and a lower surface of the fourth semiconductor layer,

wherein the third semiconductor layer has a concentration of the p-type dopant less than that of each of the second and fourth semiconductor layers,

wherein the third semiconductor layer is formed of a lower conductive layer than that of each of the second and fourth semiconductor layers, and

wherein the third semiconductor layer is formed of a GaN semiconductor.

2. The semiconductor light emitting device of claim 1, wherein the third semiconductor layer is physically contacted with the top surface of the second semiconductor layer and the lower surface of the fourth semiconductor layer.

3. The semiconductor light emitting device of claim 1, wherein the third semiconductor layer has the concentration of the p-type dopant of 5×

10¹⁷/cm³ or more.

4. The semiconductor light emitting device of claim 3, wherein the third semiconductor layer has a hole concentration of 5×

10¹⁸/cm³ or less.

5. The semiconductor light emitting device of claim 3, wherein a sum of thicknesses of the second to third semiconductor layers is a range of 500 Å

˜

1000 Å

.

6. The semiconductor light emitting device of claim 1, wherein the third semiconductor layer has a thickness less than 9 nm.

7. The semiconductor light emitting device of claim 1, wherein the first semiconductor layer is formed of a GaN semiconductor.

8. The semiconductor light emitting device of claim 1, wherein the active layer includes a barrier layers and a well layer,

wherein the barrier layer has a hole concentration of 5×

10¹⁸/cm³ or less.

9. A semiconductor light emitting device, comprising:

a substrate;

an n-type semiconductor layer on the substrate;

an active layer disposed on the n-type semiconductor layer;

a plurality of p-type semiconductor layers on a first barrier layer of the active layer;

a first electrode connected to the plurality of n-type semiconductor layers;

a second electrode on the plurality of p-type semiconductor layers; and

a transparent electrode layer disposed between the plurality of semiconductor layers and the second electrode,

wherein the plurality of p-type semiconductor layers includes a first layer on the active layer, a second layer on the first layer and a third layer on the second layer,

wherein the second layer is disposed between the first layer and the second layer,

wherein the first layer is formed of an InAlGaN semiconductor,

wherein the second layer has a concentration of a p-type dopant less than that of each of the first and third layers,

wherein the second layer is formed of a lower conductive layer than that of each of the first and third layers,

wherein the second layer is formed of a GaN semiconductor.

10. The semiconductor light emitting device of claim 9, wherein the second layer has a hole concentration of about 5×

10¹⁸/cm³ or less and has a greater resistivity than that of the first semiconductor layer.

11. The semiconductor light emitting device of claim 9, wherein the second layer has a greater resistivity than that of each of the first and the third layers.

12. The semiconductor light emitting device of claim 9, wherein the second layer is physically contacted with a top surface of the first layer and a lower surface of the second layer.

13. The semiconductor light emitting device of claim 9, wherein the second layer has the concentration of a p-type dopant of 5×

10¹⁷/cm³ or more.

14. The semiconductor light emitting device of claim 13, wherein the second layer has a hole concentration of 5×

10¹⁸/cm³ or less.

15. The semiconductor light emitting device of claim 13, wherein a sum of thicknesses of the first to third layers is a range of 500 Å

˜

1000 Å

.

16. The semiconductor light emitting device of claim 9, wherein the second layer has a thickness less than 9 nm.

17. The semiconductor light emitting device of claim 9, wherein the n-type semiconductor layer and the third layer are formed of a GaN semiconductor.

18. The semiconductor light emitting device of claim 9, wherein the active layer includes a plurality of barrier layers and a plurality of well layers,

wherein the first barrier layer adjacent to the plurality of p-type semiconductor layers has a hole concentration of 5×

10¹⁸/cm³ or less.

19. The semiconductor light emitting device of claim 9, wherein the second layer has a hole concentration of about 5×

10¹⁸/cm³ or less and has a thickness of greater than 0 nm and less than 9 nm.

20. The semiconductor light emitting device of claim 11, wherein the third layer is directly contacted with the transparent electrode layer.