OPTOELECTRONIC SEMICONDUCTOR CHIP, OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND A METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT

• US 20140117396A1
• Filed: 05/18/2012
• Published: 05/01/2014
• Est. Priority Date: 05/18/2011
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Eisert, Dominik, Baade, Torsten, Zitzlsperger, Michael
• Granted Patent: US 9,444,022 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/4554 Coating
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48471 the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
• CPC Class Codes: H01L 2224/48479 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/52 : Encapsulations
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaves free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is designed to be absorbent and/or reflective and/or scattering for the primary radiation.

Claims

1. An optoelectronic semiconductor chip comprising a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein

the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, said outer surface emitting primary light, and leaves free a second partial region of said outer surface,

the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body,

the first lamina is at least partly transmissive to the primary radiation,

a section of the second lamina covers at least the second partial region, and

at least the section of the second lamina is designed to be absorbent and/or reflective and/or scattering for the primary radiation.

2. The optoelectronic semiconductor chip according to claim 1, wherein an electrical connection location composed of a metallic material is applied to that partial region of the outer surface of the semiconductor body which is left free by the first lamina.

3. The optoelectronic semiconductor chip according to claim 1, wherein the first lamina contains a phosphor and the second lamina contains at least one element selected from the group consisting of a phosphor and a wavelength-selective filter that transmits secondary light and absorbs and/or reflects primary light.

4. The optoelectronic semiconductor chip according to claim 1, wherein the first lamina is transparent or translucent and the second lamina contains a phosphor.

5. The optoelectronic semiconductor chip according to claim 1, wherein thickness of the first lamina is greater than 50 μ

m.

6. The optoelectronic semiconductor chip according to claim 1, wherein an edge region of the second lamina laterally projects beyond the semiconductor body and the edge region absorbs and/or reflects and/or scatters the primary radiation.

7. The optoelectronic semiconductor chip according to claim 1, wherein the first and/or the second lamina are/is absorbent and/or reflective for the primary radiation such that the luminescence conversion element at a surface facing away from the semiconductor body and provided to emit secondary light, emits at most two percent of the radiation power of a primary light coupled in through its surface facing the semiconductor body.

8. The optoelectronic semiconductor chip according to claim 1, wherein the first lamina is fixed to the first partial region by a transparent or translucent adhesive layer.

9. An optoelectronic component comprising a semiconductor chip according to claim 2 and an electrical connection conductor fixed to the electrical connection location, wherein the second lamina covers the electrical connection conductor at least in places.

10. The optoelectronic component according to claim 9, wherein the semiconductor body is laterally surrounded with a reflective material, which leaves free at least the first partial region of the outer surface provided to emit primary light.

11. The optoelectronic component according to claim 10, wherein the semiconductor body and the first lamina are surrounded with a reflective material which covers the second partial region at least in places.

12. A method of producing the optoelectronic component according to claim 9, comprising:

providing a carrier element for the semiconductor body,

fixing the semiconductor body on the carrier element,

fixing the electrical connection conductor to the semiconductor body and to the carrier element, and

at least in places covering the connection conductor with the second lamina after the connection conductor has been fixed.

13. The method according to claim 12, wherein

either the first lamina is fixed before fixing of the connection conductor to the semiconductor body and, after the connection conductor has been fixed, the second lamina is fixed to the first lamina,

or first, the luminescence conversion element with the first and second laminae is produced and, after the connection conductor has been fixed, the luminescence conversion element is fixed to the semiconductor body.

14. An optoelectronic component comprising a reflector cavity, a light-emitting semiconductor body that emits primary light in the reflector cavity and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein

the reflector cavity has an opening,

a first partial region of the opening is covered with a reflector layer,

a second partial region of the opening is not covered with the reflector layer, and

the luminescence conversion element in a plan view of the opening completely overlaps the second partial region.

16. The optoelectronic component according to claim 14, wherein, in a plan view of the opening, the second partial region completely overlaps the semiconductor body.

17. The optoelectronic component according to claim 14, wherein, in a plan view of the opening, the second partial region laterally with respect to the semiconductor body is arranged in an edge region of the opening.

18. The optoelectronic component according to claim 17, wherein the luminescence conversion element is an encapsulation compound with which the reflector cavity is filled.

19. The optoelectronic component according to claim 18, wherein the luminescence conversion element encapsulates the semiconductor body.

20. The optoelectronic component according to claim 18, wherein the reflector cavity is completely filled with the luminescence conversion element.

15. (canceled)