THINFILM STACKS FOR LIGHT MODULATING DISPLAYS
First Claim
1. A device, comprisinga substrate layer disposed proximate a light source and havingan aperture to allow light to pass through the substrate layer, andan absorption film stack including:
- a layer of light reflecting material,a layer of light absorbing material disposed on the layer of light reflecting material and being spaced a fixed distance from the layer of light reflecting material, andan interferometric absorption film stack, including;
a layer of a dielectric material of a first refractive index, and a layer of dielectric material of a second refractive index,the thicknesses of the layers of dielectric material being selected to cause light reflected from the interferometric absorption film stack to interfere with light incident on the interferometric absorption film stack and have an interference standing wave with a peak amplitude occurring at the layer of light absorbing material.
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Accused Products
Abstract
This disclosure provides systems, methods and apparatus for absorption film stacks. In one aspect, the absorption film stack is an interferometric absorption film stack that, for a selected wavelength of light, reduces light reflected from a surface of the stack by setting up a standing wave within the stack of materials. In some implementations, an absorbing layer may be placed at the peak of the standing wave interference pattern. The absorbing layer can be implemented to absorb selected wavelengths of light and substantially reduce the amount of unwanted reflections. In some other implementations, a reflective surface may be formed on the surface of the stack opposite the absorbing layer.
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Citations
35 Claims
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1. A device, comprising
a substrate layer disposed proximate a light source and having an aperture to allow light to pass through the substrate layer, and an absorption film stack including: -
a layer of light reflecting material, a layer of light absorbing material disposed on the layer of light reflecting material and being spaced a fixed distance from the layer of light reflecting material, and an interferometric absorption film stack, including; a layer of a dielectric material of a first refractive index, and a layer of dielectric material of a second refractive index, the thicknesses of the layers of dielectric material being selected to cause light reflected from the interferometric absorption film stack to interfere with light incident on the interferometric absorption film stack and have an interference standing wave with a peak amplitude occurring at the layer of light absorbing material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of manufacturing, comprising:
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providing a layer of light reflecting material, and forming over the layer of light reflecting material, a light absorbing film having; a layer of light absorbing material, and a first layer of material with a first index of refraction and a first thickness of about 25 to 40 nm and a second layer of material with a second index of refraction and a second thickness of about 10 nm to 20 nm, the respective thicknesses of the first and second layers being selected to provide interferometric attenuation of light within a selected range of wavelengths and at an angle of incidence more than about 30°
to an axis normal to the absorbing film. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A thin film stack, comprising
a substrate layer having an aperture to allow light to pass through the substrate layer and being disposed proximate a light source of a first wavelength, and including a layer of light reflecting material having a first side and a second side, an interferometric absorption stack disposed on the second side of the layer of light reflecting material and having two layers of dielectric material with thicknesses and refractive indices selected to reduce a reflectivity of light incident at angles 0° - to 50° and
propagating at the first wavelength, anda high reflectance stack disposed on the first side of the layer of light reflecting material and having one or more than one paired layers of dielectric material with thicknesses and refractive indices selected to achieve photopically weighted reflectivity of greater than 90% for light incident at angles between 0°
to 50° and
propagating at the first wavelength. - View Dependent Claims (31, 32, 33, 34, 35)
- to 50° and
Specification