LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF

• US 20140118656A1
• Filed: 03/15/2013
• Published: 05/01/2014
• Est. Priority Date: 10/29/2012
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Jang, Dae Hwan, Park, Sang Ho, Kim, Dong Jo, Nam, Jung Gun, Jo, Gug Rae, Lee, Dae-Young
• Granted Patent: US 9,244,320 B2
• Time in Patent Office: Days
• US Class Current: 349/44
• CPC Class Codes: G02F 1/133528 Polarisers
• CPC Class Codes: G02F 1/133548 Wire-grid polarisers
• CPC Class Codes: G02F 1/133611 including means for improving the brightness uniformity
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element

Abstract

A liquid crystal display includes a transparent insulation substrate, a first polarizer, and a semiconductor layer, a thin film transistor, and a backlight unit. The first polarizer is disposed on the transparent insulation substrate. The first polarizer includes a light blocking film and metal wires. The semiconductor layer, disposed on the light blocking film, has a perimeter aligned with a perimeter of the light blocking film. The thin film transistor, disposed on the semiconductor layer, includes a source region and a drain region disposed in the semiconductor layer. The backlight unit, disposed under the transparent insulation substrate, provides light to the transparent insulation substrate. The blocking film reflects substantially all of the light. Gaps are disposed between the metal wires.

Claims

1. A liquid crystal display, comprising:

a transparent insulation substrate;

a first polarizer comprising a light blocking film and a first plurality of metal wires, the first polarizer disposed on the transparent insulation substrate;

a semiconductor layer disposed on the light blocking film, the semiconductor layer having a perimeter aligned with a perimeter of the light blocking film; and

a thin film transistor disposed on the semiconductor layer, wherein the thin film transistor comprises a source region and a drain region;

a backlight unit disposed under the transparent insulation substrate, the backlight unit providing light to the transparent insulation substrate, wherein the light blocking film reflects substantially all of the light, and wherein gaps are disposed between the first plurality of metal wires.

2. The liquid crystal display of claim 1, further comprising an interlayer buffer layer disposed between the semiconductor layer and the light blocking film.

3. The liquid crystal display of claim 2, wherein the interlayer buffer layer has a perimeter aligned with the perimeter of the semiconductor layer.

4. The liquid crystal display of claim 1, wherein a width of the gaps is less than a wavelength of the light provided by the backlight unit.

5. The liquid crystal display of claim 3, further comprising

a first buffer layer disposed between the transparent insulation substrate and the first polarizer.

6. The liquid crystal display of claim 1, wherein the thin film transistor comprises a gate electrode and a gate insulating layer, the gate insulating layer disposed on the semiconductor layer and the gate electrode disposed on the gate insulating layer.

7. The liquid crystal display of claim 1, wherein the light blocking film and the first plurality of metal wires include a common metal that is Al, Au, Ag, Cu, Cr, Fe, or Ni.

8. The liquid crystal display of claim 6, wherein the source and the drain regions are disposed in the semiconductor layer, and wherein the thin film transistor further comprises a source electrode connected to the source region and a drain electrode connected to the drain region.

9. The liquid crystal display of claim 1, further comprising a second polarizer comprising a second plurality of metal wires, the second plurality of metal wires spaced apart from each other at a predetermined distance smaller than a wavelength of the light from the backlight unit.

10. The liquid crystal display of claim 1, wherein an upper surface of a light blocking film is level with that of the first plurality of metal wires.

11. The liquid crystal display of claim 10, wherein each of the first plurality of metal wires has a predetermined thickness and a predetermined width, the predetermined thickness being at least 2.5 times than the predetermined width.

12. The liquid crystal display of claim 8, further comprising a pixel electrode connected to the drain electrode of the thin film transistor.

13. The liquid crystal display of claim 1, wherein the gaps include air.

14. A method of manufacturing a liquid crystal display, comprising:

forming a metal layer on a transparent insulation substrate;

patterning a plurality of metal wires and a light blocking film by etching the metal layer;

forming a semiconductor layer on the light blocking film, wherein a perimeter of the semiconductor layer is aligned with a perimeter of the light blocking film; and

forming a thin film transistor on the semiconductor layer.

15. The manufacturing method of a liquid crystal display of claim 14, wherein patterning the plurality of metal wires and the light blocking film comprises:

forming a hard mask layer on the metal layer;

forming a polymer layer on the hard mask layer;

forming a linear pattern in the polymer layer by rolling with a mold;

forming a hard mask pattern by etching the hard mask layer using the linear pattern of the polymer layer as an etch mask;

forming a first photo resist on the hard mask pattern; and

forming a first photo resist pattern using a photomask, wherein the photomask exposes a part of the photo resist, the exposed part of the photo resist covering a part of the metal layer to be the light blocking film.

16. The manufacturing method of a liquid crystal display of claim 14, wherein forming the semiconductor layer comprises:

forming a preliminary interlayer buffer layer on both the plurality of metal wires and the light blocking film;

forming a preliminary semiconductor layer on the preliminary interlayer buffer layer;

forming a second photo resist on the preliminary semiconductor layer;

forming a second photo resist pattern using the photomask used for forming the first photo resist pattern; and

forming the semiconductor layer by etching the preliminary semiconductor layer using the second photo resist pattern as an etch mask.

17. The manufacturing method of a liquid crystal display of claim 14, wherein forming the thin film transistor includes:

forming a gate insulating layer and a gate electrode on the semiconductor layer; and

forming a source region and a drain region in the semiconductor layer.

18. The manufacturing method of a liquid crystal display of claim 14, further comprising forming a first buffer layer before forming the metal layer on the transparent insulation substrate.

19. The liquid crystal display of claim 14, wherein an upper surface of a light blocking film is substantially level with that of the plurality of metal wires.

20. The liquid crystal display of claim 19, wherein each of the plurality of metal wires has a predetermined thickness and a predetermined width, the predetermined thickness being at least 2.5 times than the predetermined width.