MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT

• US 20140119109A1
• Filed: 01/03/2014
• Published: 05/01/2014
• Est. Priority Date: 07/04/2011
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nagase, Toshihiko, Watanabe, Daisuke, Ueda, Koji, Nishiyama, Katsuya, Kitagawa, Eiji, Noma, Kenji, Kai, Tadashi
• Granted Patent: US 9,312,475 B2
• Time in Patent Office: Days
• US Class Current: 365/158
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

According to one embodiment, a magnetoresistive element includes first and second magnetic layers, a first nonmagnetic layer, a conductive layer. The first and second magnetic layers have axes of easy magnetization perpendicular to a film plane. The first and second magnetic layers have variable and invariable magnetization directions, respectively. The first nonmagnetic layer is between the first and second magnetic layers. The conductive layer is on a surface of the first magnetic layer opposite to a surface on which the first nonmagnetic layer is formed. The first magnetic layer has a structure obtained by alternately laminating magnetic and nonmagnetic materials. The nonmagnetic material includes at least one of Ta, W, Nb, Mo, Zr, Hf. The magnetic material includes Co and Fe. One of the magnetic materials contacts the first nonmagnetic layer. One of the nonmagnetic materials contacts the conductive layer.

Claims

1. A magnetoresistive element comprising:

a first magnetic layer having an axis of easy magnetization perpendicular to a film plane, and a variable magnetization direction;

a second magnetic layer having an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization direction;

a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer; and

a conductive layer formed on a surface of the first magnetic layer, which is opposite to a surface on which the first nonmagnetic layer is formed,

wherein the first magnetic layer has a structure obtained by alternately laminating a magnetic material and a nonmagnetic material, the nonmagnetic material includes at least one element from among Ta, W, Nb, Mo, Zr and Hf, the magnetic material includes Co and Fe, one of the magnetic materials contacts the first nonmagnetic layer, and one of the nonmagnetic materials contacts the conductive layer.

2. The magnetoresistive element according to claim 1, wherein the magnetic material contacting the first nonmagnetic layer is made of a CoFe alloy or an alloy (Co_100-x—

Fe_x)_100-yB_y containing Co, Fe and B where x≧

50 at % and 0<

y≦

30 at %.

3. The magnetoresistive element according to claim 1, wherein the magnetic material not contacting the first nonmagnetic layer and the nonmagnetic material include an amorphous state.

4. The magnetoresistive element according to claim 1, wherein the magnetic material contacting the first nonmagnetic layer and the magnetic material not contacting the first nonmagnetic layer have different crystalline states.

6. The magnetoresistive element according to claim 1, further comprising:

an interface layer which is arranged between the second magnetic layer and the first nonmagnetic layer and has a high polarization.

7. The magnetoresistive element according to claim 1, further comprising:

a shift cancelling layer formed on a surface of the second magnetic layer, which is opposite to a surface on which the first nonmagnetic layer is formed, and which has a magnetization direction reverse to the magnetization direction of the second magnetic layer; and

a second nonmagnetic layer arranged between the second magnetic layer and the shift cancelling layer.

8. The magnetoresistive element according to claim 7, wherein the second nonmagnetic layer includes Ru.

9. The magnetoresistive element according to claim 1, further comprising:

a shift cancelling layer which is arranged between the first magnetic layer and the conductive layer and has a magnetization direction reverse to the magnetization direction of the second magnetic layer; and

a second nonmagnetic layer arranged between the first magnetic layer and the shift cancelling layer.

10. The magnetoresistive element according to claim 9, wherein the second nonmagnetic layer includes Ru.

12. The magnetoresistive element according to claim 1, wherein the first nonmagnetic layer includes a tunnel barrier layer.

13. The magnetoresistive element according to claim 12, wherein the first nonmagnetic layer includes any one of MgO, CaO, SrO, TiO, VO and NbO.

14. The magnetoresistive element according to claim 1, wherein the conductive layer includes an interconnect layer.

15. The magnetoresistive element according to claim 1, wherein the conductive layer includes Ta or Ru.

16. The magnetic memory comprising a memory cell including the magnetoresistive element according to claim 1, and first and second electrodes for sandwiching the magnetoresistive element and for electrically conducting the magnetoresistive element.

17. The magnetic memory according to claim 16, further comprising:

a first interconnect electrically connected to the first electrode;

a second interconnect electrically connected to the second electrode; and

a write circuit which is electrically connected to the first interconnect and the second interconnect and supplies the bidirectional current to the magnetoresistive element.

5. The magnetoresistive element according to claim wherein the first magnetic layer has a structure in which a magnetic material, a nonmagnetic material, a magnetic material and a nonmagnetic material are laminated in this order between the first nonmagnetic layer and the conductive layer from the first nonmagnetic layer side.

11. The magnetoresistive element according to claim further comprising

a cap layer formed on a surface of the second magnetic layer, which is opposite to a surface on which the first nonmagnetic layer is formed.

18. A method of manufacturing a magnetoresistive element comprising:

forming a first nonmagnetic material;

forming a first magnetic material on the first nonmagnetic material;

forming a second nonmagnetic material on the first magnetic material;

forming a second magnetic material on the second nonmagnetic material;

forming a nonmagnetic layer on the second magnetic material;

forming a magnetic layer on the nonmagnetic layer; and

performing a thermal processing after forming the magnetic layer,

wherein after the thermal processing, the first magnetic material not contacting the nonmagnetic layer and the second nonmagnetic material have an amorphous state.

19. The method of manufacturing a magnetoresistive element according to claim 18,

wherein the second magnetic material is less likely to be crystallized from the second nonmagnetic material side and is likely to be crystallized from the nonmagnetic layer side.