ADJUSTING PROGRAM AND ERASE VOLTAGES IN A MEMORY DEVICE

• US 20140119121A1
• Filed: 01/08/2014
• Published: 05/01/2014
• Est. Priority Date: 12/05/2007
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Aritome, Seiichi
• Granted Patent: US 9,030,874 B2
• Time in Patent Office: Days
• US Class Current: 365/185.11
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/16 for erasing blocks, e.g. arrays, words, groups
• CPC Class Codes: H01L 27/0207 Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H10B 41/30 characterised by the memory core region
• CPC Class Codes: H10B 41/35 with a cell select transistor, e.g. NAND

Abstract

A system and apparatus for adjusting threshold program and erase voltages in a memory array, such as a floating gate memory array, for example. One such method includes applying a first voltage level to a first edge word line of a memory block string and applying a second voltage level to a second edge word line of the memory block string. Such a method might also include applying a third voltage level to non-edge word lines of the memory block string.

Claims

1. A memory array comprising:

a first select gate;

a first edge cell arranged directly adjacent to and not in contact with the first select gate;

a second select gate; and

a second edge cell arranged directly adjacent to the second select gate, wherein during an erase operation, the first edge cell is configured to receive a first erase voltage and the second edge cell is configured to receive a second erase voltage different from the first erase voltage.

2. The memory array of claim 1, wherein the first edge cell is arranged at a first distance from the first select gate and the second edge cell is arranged at a second distance from the second select gate.

3. The memory array of claim 2, wherein the first distance is less than the second distance.

4. The memory array of claim 1, comprising a string of memory cells having the first edge cell, the second edge cell, the first select gate, and the second select gate.

5. The memory array of claim 4, wherein the string of memory cells is organized into a first block and a second block, and wherein the first edge cell, the second edge cell, the first select gate, and the second select gate are arranged in the first block.

6. The memory array of claim 5, wherein the second block comprises:

a third edge cell and a fourth edge cell;

a third select gate arranged directly adjacent to the third edge cell; and

a fourth select gate arranged directly adjacent to the fourth edge cell.

7. The memory array of claim 6, wherein the third edge cell is configured to receive a third erase voltage and the fourth edge cell is configured to receive a fourth erase voltage during the erase operation, and wherein the third erase voltage is different from the fourth erase voltage.

8. The memory array of claim 7, wherein the third edge cell is arranged at a third distance from the third select gate and the fourth edge cell is arranged at a fourth distance from the fourth select gate.

9. The memory array of claim 7, wherein the first erase voltage, the second erase voltage, the third erase voltage, and the fourth erase voltage are each different.

10. The memory array of claim 1, wherein the first select gate is a source select gate, and wherein the second select gate is a drain select gate.

11. The memory array of claim 1, comprising a plurality of non-edge cells disposed between the first edge cell and the second edge cell.

12. The memory array of claim 11, wherein each non-edge cell of the plurality of non-edge cells is configured to receive a non-edge erase voltage, and wherein the first erase voltage and the second erase voltage are lower than the non-edge erase voltage.

13. The memory array of claim 1, wherein the first edge cell is configured to receive a first program voltage and the second edge cell is configured to receive a second program voltage during a programming operation, and wherein the first program voltage is different from the second program voltage.

14. A memory array comprising:

a first select gate;

a first edge cell arranged directly adjacent to and not in contact with the first select gate;

a second select gate; and

a second edge cell arranged directly adjacent to the second select gate, wherein during a programming operation, the first edge cell is configured to receive a first program voltage and the second edge cell is configured to receive a second program voltage different from the first program voltage.

15. The memory array of claim 14, comprising a plurality of non-edge cells arranged between the first edge cell and the second edge cell, wherein each non-edge cell of the plurality of non-edge cells is configured to receive a program voltage that is higher than the first and second program voltages.

16. The memory array of claim 14, wherein, during an erase operation, the first edge cell is configured to receive a first erase voltage, and wherein the second edge cell is configured to receive a second erase voltage, wherein the first erase voltage is different than the second erase voltage.

17. The memory array of claim 14, wherein the first edge cell is arranged at a first distance from the first select gate and the second edge cell is arranged at a second distance from the second select gate, and wherein the first distance is different from the second distance.

18. The memory array of claim 14, comprising a string of memory cells having the first edge cell, the second edge cell, the first select gate, and the second select gate.

19. A memory array comprising:

a control gate of a first edge memory cell configured to receive a first voltage level during a selected type of operation of the memory array; and

a control gate of a second edge memory cell configured to receive a second voltage level during the selected type of operation, wherein the first voltage level is different from the second voltage level.

20. The memory array of claim 19, wherein the selected type of operation comprises an erase operation.

21. The memory array of claim 19, wherein the selected type of operation comprises a programming operation.

22. The memory array of claim 19, wherein the first voltage level is approximately 0 volts, and the second voltage level is between approximately 0.5 volts and 2.5 volts.

23. The memory array of claim 19, wherein the first voltage level is determined based upon a first distance between the control gate of the first edge memory cell and a first select gate disposed adjacent thereto, and wherein the second voltage level is determined based upon a second distance between the control gate of the second edge memory cell and a second select gate disposed adjacent thereto.