METHOD OF DEPOSITING THIN FILM
First Claim
1. A method for forming a silicon germanium oxide thin film on a substrate in a reaction space by at least one complete cycle of an atomic layer deposition (ALD) process, wherein one complete cycle comprises:
- a germanium oxide deposition sub-cycle comprising;
contacting the substrate with a germanium reactant,removing excess germanium reactant, andcontacting the substrate with a first oxygen reactant; and
a silicon oxide deposition sub-cycle comprising;
contacting the substrate with a silicon reactant,removing excess silicon reactant, andcontacting the substrate with a second oxygen reactant.
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Abstract
A method for forming a silicon germanium oxide thin film on a substrate in a reaction space may be performed using an atomic layer deposition (ALD) process. The process may include at least one cycle comprising a germanium oxide deposition sub-cycle and a silicon oxide deposition sub-cycle. The germanium oxide deposition sub-cycle may include contacting the substrate with a germanium reactant, removing excess germanium reactant, and contacting the substrate with a first oxygen reactant. The silicon oxide deposition sub-cycle may include contacting the substrate with a silicon reactant, removing excess silicon reactant, and contacting the substrate with a second oxygen reactant. The films of the present disclosure exhibit desirable etch rates relative to thermal oxide. Depending on the films'"'"' composition, the etch rates may be higher or lower than the etch rates of thermal oxide.
441 Citations
26 Claims
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1. A method for forming a silicon germanium oxide thin film on a substrate in a reaction space by at least one complete cycle of an atomic layer deposition (ALD) process, wherein one complete cycle comprises:
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a germanium oxide deposition sub-cycle comprising; contacting the substrate with a germanium reactant, removing excess germanium reactant, and contacting the substrate with a first oxygen reactant; and a silicon oxide deposition sub-cycle comprising; contacting the substrate with a silicon reactant, removing excess silicon reactant, and contacting the substrate with a second oxygen reactant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for forming a silicon germanium oxide thin film on a substrate in a reaction space by performing a plurality of an atomic layer deposition (ALD) cycles, wherein at least one ALD cycle comprises:
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at least one ALD germanium oxide deposition sub-cycle; and at least one ALD silicon oxide deposition sub-cycle. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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Specification