LIGHT EMITTING DEVICE

• US 20140124731A1
• Filed: 10/30/2013
• Published: 05/08/2014
• Est. Priority Date: 11/02/2012
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: Hwan Hee Jeong
• Inventors: JEONG, Hwan Hee
• Granted Patent: US 9,190,562 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/002 having heterojunctions or graded gap
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting structure includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. A plurality of first electrodes is provided on the first conductive semiconductor layer, and a second electrode electrically connects to the second conductive semiconductor layer. A conductive support member is provided under the second electrode, and a plurality of first connection parts is coupled the first electrodes to the conductive support member, respectively. A second connection part is coupled to the second electrode. The first electrodes are spaced apart from each other on a top surface of the first conductive semiconductor layer.

Claims

1. A light emitting device comprising:

a light emitting structure comprising a first conductive semiconductor layer and a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;

a plurality of first electrodes on the first conductive semiconductor layer;

a second electrode electrically connected to the second conductive semiconductor layer;

a conductive support member under the second electrode;

a plurality of first connection parts electrically connecting the first electrodes to the conductive support member, respectively; and

a second connection part electrically connected to the second electrode,

wherein the first electrodes are spaced apart from each other on a top surface of the first conductive semiconductor layer.

2. The light emitting device of claim 1, wherein the first electrodes are arranged in a form of dots on the first conductive semiconductor layer.

3. The light emitting device of claim 1, wherein the first electrodes are arranged around the first conductive semiconductor layer.

4. The light emitting device of claim 1, wherein the first electrodes adjacent to each other are spaced apart from each other by a distance of about 100 μ

m to about 500 μ

m.

5. The light emitting device of claim 1, wherein the first connection parts are arranged at a lateral side of the light emitting structure.

6. The light emitting device of claim 5, wherein the first connection parts are spaced apart from each other.

7. The light emitting device of claim 1, further comprising a channel layer around a lower portion of the light emitting structure, wherein one end of the second connection part is provided on the channel layer.

8. The light emitting device of claim 7, wherein the one end of the second connection part is spaced apart from a sidewall of the light emitting structure and exposed to a lateral side of the light emitting structure.

9. The light emitting device of claim 7, wherein a top surface of the channel layer is higher than a top surface of the active layer.

10. The light emitting device of claim 1, wherein the second electrode comprises a metal layer under the second conductive semiconductor layer, and the second connection part is electrically connected to the metal layer.

11. The light emitting device of claim 10, further comprising an insulating layer disposed between the metal layer and the conductive support member.

12. The light emitting device of claim 11, wherein a top surface of the insulating layer is exposed to a peripheral portion of a lower portion of the light emitting structure.

13. The light emitting device of claim 11, wherein the first connection part is electrically connected to the conductive support member through the insulating layer.

14. The light emitting device of claim 1, further comprising a protective layer disposed between the first connection part and the light emitting structure.

15. The light emitting device of claim 7, wherein the channel layer surrounds the active layer.

16. The light emitting device of claim 7, wherein the channel layer surrounds the second conductive semiconductor layer.

17. A light emitting device comprising:

a light emitting structure comprising a first conductive semiconductor layer and a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;

a plurality of first electrodes on the first conductive semiconductor layer;

a second electrode electrically connected to the second conductive semiconductor layer;

a conductive support member under the second electrode;

a plurality of first connection parts electrically connecting the first electrodes to the conductive support member, respectively; and

a second connection part electrically connected to the second electrode,

wherein the first electrodes are arranged around the first conductive semiconductor layer,

wherein the first electrodes are spaced apart from each other on the first conductive semiconductor layer, and

wherein the first connection parts are arranged at a lateral side of the light emitting structure.

18. The light emitting device of claim 17, wherein the first connection parts are spaced apart from each other.

19. A light emitting device comprising:

a light emitting structure comprising a first conductive semiconductor layer and a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;

a plurality of first electrodes on the first conductive semiconductor layer;

a second electrode electrically connected to the second conductive semiconductor layer;

a conductive support member under the second electrode;

a plurality of first connection parts electrically connecting the first electrodes to the conductive support member, respectively; and

a second connection part electrically connected to the second electrode,

wherein the first electrodes are spaced apart from each other on the first conductive semiconductor layer,

wherein a top surface of the channel layer is higher than a top surface of the active layer, and

wherein the channel layer surrounds the active layer.

20. The light emitting device of claim 19, wherein the channel layer surrounds the second conductive semiconductor layer.