METHOD FOR ESTIMATING THE END OF LIFETIME FOR A POWER SEMICONDUCTOR DEVICE

• US 20140125366A1
• Filed: 06/21/2012
• Published: 05/08/2014
• Est. Priority Date: 06/21/2011
• Status: Active Grant

• Current Assignee: KK Wind Solutions A/S (A.P. Møller Holding A/S)
• Original Assignee: KK-Electronic A/S
• Inventors: Thgersen, Paul Bach, Rannestad, Bjrn
• Granted Patent: US 9,529,037 B2
• Time in Patent Office: Days
• US Class Current: 324/750.03
• CPC Class Codes: G01R 31/2608 for testing bipolar transistors
• CPC Class Codes: G01R 31/2642 Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
• CPC Class Codes: G01R 31/2817 Environmental-, stress-, or burn-in tests of IC's G01R31/2855; of individual semiconductors G01R31/2642; of other circuits G01R31/2849

Abstract

The invention regards an method for estimating the end of lifetime for a power semiconductor device, such as an IGBT power module, comprising the steps of; establishing the temperature of the power semiconductor device, determining the voltage drop over the power semiconductor device for at least one predetermined current where the current is applied when the power semiconductor device is not in operation, wherein the end of lifetime is established dependent on the change in a plurality of determined voltage drops.

Claims

1. A method for estimating the end of lifetime for a power semiconductor device comprising the steps of:

establishing the temperature of the power semiconductor device,

determining the voltage drop across the power semiconductor device during the flow of at least one predetermined current where said current is applied when the power semiconductor device is not in operation,

repeating the step of determining the voltage drop a plurality of times, and

noting any change in said voltage drop as measured said plurality of times;

wherein the end of lifetime is established dependent on the change in said plurality of determined voltage drops.

2. The method according to claim 1, wherein the end of lifetime is established by comparing the plurality of determined voltage drops with a reference data set of voltage drops.

3. The method according to claim 2, wherein the reference data set is established via accelerated tests.

4. The method according to claim 2, wherein the reference data set is a new updated reference data set.

5. The method according to claim 1, wherein estimated end of lifetime is used to change a derating factor for the power semiconductor device.

6. The method according to claim 1, wherein the temperature is established by determining the temperature of a power semiconductor chip comprised in the power semiconductor device.

7. The method according any to claim 1, wherein the temperature is established by heating the power semiconductor device to a predetermined temperature.

8. The method according to claim 1, wherein the temperature is established when the power semiconductor device is not in operation.

9. The method according to claim 1, wherein the power semiconductor device has not been in operation for at least five times the thermal time constant of the thermal stack.

10. The method according to claim 1, wherein the current is applied for less time than 10% of the thermal time constant for a silicon chip comprised in the power semiconductor device.

11. The method according to claim 1, wherein the current is applied for less than 1 millisecond.

12. The method according to claim 1, wherein determining the voltage drop is established as a function of the lifetime consumption for the power semiconductor device.

13. An apparatus for estimating the end of lifetime for a power semiconductor device comprising:

means for establishing the temperature of the power semiconductor device,

means for determining the voltage drop over the power semiconductor device for at least one predetermined current where the current is applied when the power semiconductor device is not in operation, and

means for establishing the end of lifetime based on the change of a plurality of determined voltage drops.

14. The apparatus of claim 13, wherein the means for establishing end of lifetime operates to compare the plurality of determined voltage drops with a reference data set of voltage drops.

15. The apparatus of claim 13, wherein the apparatus further comprises at least one gate drive for the power semiconductor device, wherein the means to measure the voltage is integrated in the gate drive.

16. The apparatus of claim 14, further comprising means for substituting the reference data set with a new updated reference data.

17. The apparatus of claim 13, wherein the means for establishing the temperature heats the power semiconductor device to a predetermined temperature.

18. A wind turbine comprising:

a power semiconductor device and the apparatus of claim 13.

19. A wind turbine according to claim 18, comprising a liquid based system in thermodynamic contact with the power semiconductor device, wherein the liquid system comprises means for controlling the temperature of the liquid.

20. A wind turbine according to claim 19, comprising a wind turbine control system operationally connected to a power converter comprising the power semiconductor device and that the liquid system is in operationally connected to the power converter.

21. A wind turbine according to claim 20, wherein the wind turbine control system is operationally connected to the liquid system.