METHOD FOR ESTIMATING THE END OF LIFETIME FOR A POWER SEMICONDUCTOR DEVICE
First Claim
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1. A method for estimating the end of lifetime for a power semiconductor device comprising the steps of:
- establishing the temperature of the power semiconductor device,determining the voltage drop across the power semiconductor device during the flow of at least one predetermined current where said current is applied when the power semiconductor device is not in operation,repeating the step of determining the voltage drop a plurality of times, andnoting any change in said voltage drop as measured said plurality of times;
wherein the end of lifetime is established dependent on the change in said plurality of determined voltage drops.
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Abstract
The invention regards an method for estimating the end of lifetime for a power semiconductor device, such as an IGBT power module, comprising the steps of; establishing the temperature of the power semiconductor device, determining the voltage drop over the power semiconductor device for at least one predetermined current where the current is applied when the power semiconductor device is not in operation, wherein the end of lifetime is established dependent on the change in a plurality of determined voltage drops.
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21 Claims
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1. A method for estimating the end of lifetime for a power semiconductor device comprising the steps of:
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establishing the temperature of the power semiconductor device, determining the voltage drop across the power semiconductor device during the flow of at least one predetermined current where said current is applied when the power semiconductor device is not in operation, repeating the step of determining the voltage drop a plurality of times, and noting any change in said voltage drop as measured said plurality of times; wherein the end of lifetime is established dependent on the change in said plurality of determined voltage drops. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An apparatus for estimating the end of lifetime for a power semiconductor device comprising:
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means for establishing the temperature of the power semiconductor device, means for determining the voltage drop over the power semiconductor device for at least one predetermined current where the current is applied when the power semiconductor device is not in operation, and means for establishing the end of lifetime based on the change of a plurality of determined voltage drops. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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Specification