WÜSTITE-BASED PHOTOELECTRODES WITH LITHIUM, HYDROGEN, SODIUM, MAGNESIUM, MANGANESE, ZINC AND NICKEL ADDITIVES
First Claim
Patent Images
1. A photoelectrode comprising an electrode at least partially formed of FeO combined with at least one of lithium, hydrogen, sodium, magnesium, manganese, zinc, and nickel.
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Abstract
A photoelectrode, photovoltaic device and photoelectrochemical cell and methods of making are disclosed. The photoelectrode includes an electrode at least partially formed of FeO combined with at least one of lithium, hydrogen, sodium, magnesium, manganese, zinc, and nickel. The electrode may be doped with at least one of lithium, hydrogen, and sodium. The electrode may be alloyed with at least one of magnesium, manganese, zinc, and nickel.
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Citations
27 Claims
- 1. A photoelectrode comprising an electrode at least partially formed of FeO combined with at least one of lithium, hydrogen, sodium, magnesium, manganese, zinc, and nickel.
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9. A photovoltaic device comprising:
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a p-type semiconductor comprised of FeO combined with at least one of lithium, hydrogen, sodium, magnesium, manganese, zinc, and nickel; and an n-type semiconductor coupled to the p-type semiconductor forming a p-n junction. - View Dependent Claims (10, 11, 12)
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13. A photoelectrochemical cell configured for electrolysis of water, the photoelectrochemical cell comprising:
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a first photoelectrode comprised of FeO combined with at least one of lithium, hydrogen, sodium, zinc, and nickel, the electrode being configured for immersion in the water; and a second electrically coupled to the first electrode, the second electrode being configured for immersion in the water. - View Dependent Claims (14, 15, 16, 17, 18, 19, 22, 23, 27)
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20. A method of making a photovoltaic device, the method comprising:
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providing a p-type semiconductor at least partially formed FeO; and combining at least one of lithium, hydrogen, sodium, magnesium, manganese, zinc and nickel with the p-type semiconductor; providing an n-type semiconductor; and forming a p-n junction between the p-type semiconductor and n-type semiconductor. - View Dependent Claims (24, 25, 26)
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21. A method of making a photoelectrode, the method comprising:
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providing an electrode at least partially formed FeO; and combining at least one of lithium, hydrogen, sodium, magnesium, manganese, zinc and nickel with the electrode.
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Specification