METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE

• US 20140131753A1
• Filed: 11/07/2013
• Published: 05/15/2014
• Est. Priority Date: 11/09/2012
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: ISHIDA, Masashi, SATO, Daisuke, KITAJIMA, Tadayuki
• Granted Patent: US 9,276,180 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 23/28 Encapsulations, e.g. encapsulating layers, coatings, e.g. for protectionH01L23/552 takes precedence; insulating layers for contacts or interconnections H01L23/5329
• CPC Class Codes: H01L 23/31 characterised by the arrangement or shape
• CPC Class Codes: H01L 23/3135 Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12035 Zener diode
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A manufacturing method of a light emitting device includes a light emitting element disposed over a substrate and a reflective resin disposed along the side surface of the light emitting element. The method includes disposing light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements in the matrix. A reflective resin is disposed to cover the semiconductor elements along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers. The reflective resin and the substrate disposed in between the adjacent light emitting elements is cut in the column or row direction and between the light emitting element and the adjacent semiconductor element in the other direction, to include a light emitting element or a semiconductor element.

Claims

1. A method for manufacturing a light emitting device, the light emitting device comprising a light emitting element disposed over a substrate, and a reflective resin disposed along a side surface of the light emitting element, the method comprising the steps of:

disposing a plurality of light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element other than the light emitting element in between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements disposed in the matrix;

after disposing phosphor layers over the respective upper surfaces of the light emitting elements, disposing a reflective resin along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers to cover the semiconductor elements; and

simultaneously cutting the reflective resin and the substrate disposed in between the adjacent light emitting elements in one of the column and row directions and between the light emitting element and the semiconductor element adjacent thereto in the other direction of the column and row directions so as to include at least one light emitting element and one semiconductor element.

2. The method for manufacturing a light emitting device according to claim 1, wherein the semiconductor element is disposed between the light emitting element and another adjacent light emitting element having a larger one of a distance between the adjacent light emitting elements in one direction of the column and row directions and another distance between the adjacent light emitting elements in the other direction of the column and row directions.

3. The method for manufacturing a light emitting device according to claim 1, wherein, in the step of cutting, cutting is performed in a vertical direction including the light emitting element and the semiconductor element such that a corner formed by a side surface of the reflective resin on the semiconductor element side and an upper surface of the reflective resin forms an acute angle in a cross-sectional view.

4. The method for manufacturing a light emitting device according to claim 3, wherein in the step of cutting, cutting is performed such that another corner formed by a side surface of the reflective resin on the light emitting element side and the upper surface of the reflective resin forms an obtuse angle in the cross-sectional view.

5. The method for manufacturing a light emitting device according to claim 1, wherein a deepest part of a recessed portion formed at the upper surface of the reflective resin is formed directly above the semiconductor element.

6. The method for manufacturing a light emitting device according to claim 5, wherein the deepest part of the recessed portion formed at the upper surface of the reflective resin is formed directly above a center of the upper surface of the semiconductor element.

7. A light emitting device, comprising:

a light emitting element disposed over a substrate;

a phosphor layer disposed over the light emitting element;

a semiconductor element disposed adjacent to the light emitting element; and

a reflective resin disposed along side surfaces of the light emitting element and the phosphor layer to cover the semiconductor element,

wherein a corner formed by a side surface of the reflective resin on the semiconductor element side and an upper surface of the reflective resin forms an acute angle in a vertical cross-sectional view including the light emitting element and the semiconductor element.

8. The light emitting device according to claim 7, wherein another corner formed by a side surface of the reflective resin on the light emitting element side and the upper surface of the reflective resin forms an obtuse angle in the cross-sectional view.

9. The light emitting device according to claim 7, wherein a deepest part of a recessed portion formed at the upper surface of the reflective resin is formed directly above the semiconductor element.

10. The light emitting device according to claim 9, wherein the deepest part of the recessed portion formed at the upper surface of the reflective resin is formed directly above a center of the upper surface of the semiconductor element.

11. A method for manufacturing a light emitting device, the light emitting device comprising a light emitting element disposed over a substrate, and a reflective resin disposed along a side surface of the light emitting element, the method comprising the steps of:

disposing a plurality of light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element other than the light emitting element in between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements disposed in the matrix;

disposing translucent members each having a phosphor layer previously formed over a front surface thereof, over the respective light emitting elements with the phosphor layer facing the corresponding upper surface of the light emitting element;

disposing a reflective resin along the side surfaces of the light emitting elements, side surfaces of the phosphor layers, and the translucent members to cover the semiconductor elements; and

simultaneously cutting the reflective resin and the substrate disposed in between the adjacent light emitting elements in one direction of the column and row directions and between the light emitting element and the semiconductor element adjacent thereto in the other direction of the column and row directions so as to include at least one light emitting element and one semiconductor element.

12. The manufacturing method according to claim 11, wherein the phosphor layer contains a thermosetting binder, and wherein in the step of disposing the translucent member over the light emitting element, the phosphor layer is disposed in contact with the upper surface of the light emitting element with the binder half-cured, and then the phosphor layer is fully cured.

13. The manufacturing method according to claim 11, wherein the step of disposing the translucent member over the light emitting element includes the step of bonding the translucent member to the upper surface of the light emitting element by an adhesive.

14. The manufacturing method according to claim 13, wherein the step of bonding the translucent member to the upper surface of the light emitting element by the adhesive includes the step of extending a part of the adhesive at a corner formed by the side surface of the light emitting element and a surface of the phosphor layer on the light emitting element side.