Semiconductor Chip that Emits Polarized Radiation
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Abstract
A semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization. A lattice structure acts as a waveplate or polarization filter and causes an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through an output side. Therefore, the semiconductor chip emits polarized radiation, which has the polarization of the amplified radiation component. The attenuated radiation component remains in the semiconductor chip an optical structure, which converts the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip to the polarization of the amplified radiation component, and a reflective rear side opposite the output side.
11 Citations
34 Claims
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1-15. -15. (canceled)
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16. A radiation-emitting semiconductor chip comprising:
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a semiconductor body comprising an active zone, which is configured to emit unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization; a grating structure, configured to act as a waveplate or polarization filter and bring about an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through a coupling-out side, such that during operation the semiconductor chip emits polarized radiation having the polarization of the amplified radiation component, wherein the attenuated radiation component remains in the semiconductor chip; an optical structure, configured to convert the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip into the polarization of the amplified radiation component; and a reflective rear side situated opposite the coupling-out side. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A radiation-emitting semiconductor chip comprising:
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a semiconductor body comprising an active zone, which is configured to emit unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization; a grating structure, configured to act as a waveplate or polarization filter and bring about an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through a coupling-out side, such that during operating the semiconductor chip emits polarized radiation having the polarization of the amplified radiation component, wherein the attenuated radiation component remains in the semiconductor chip; an optical structure, configured to convert the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip into the polarization of the amplified radiation component; and a reflective rear side situated opposite the coupling-out side, wherein the optical structure comprises structured regions having oblique side faces that run at an angle of greater than 0° and
less than 90°
obliquely with respect to a plane in which the grating structure extends.
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34. A radiation-emitting semiconductor chip comprising:
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a semiconductor body comprising an active zone, which is configured to emit unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization; a grating structure, configured to act as a waveplate and bring about an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through a coupling-out side, such that during operating the semiconductor chip emits polarized radiation having the polarization of the amplified radiation component, wherein the attenuated radiation component remains in the semiconductor chip; an optical structure, configured to convert the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip into the polarization of the amplified radiation component; and a reflective rear side situated opposite the coupling-out side; wherein the grating structure acting as a waveplate is arranged between the active zone and the reflective rear side of the semiconductor chip, and a distance between the active zone and the reflective rear side is set in such a way that, as a result of interference of radiation of the same polarization, one radiation component is amplified and the other radiation component is attenuated.
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Specification