SOLID-STATE IMAGING APPARATUS AND METHOD FOR MANUFACTURING SAME
First Claim
1. A solid-state imaging apparatus comprising:
- a substrate;
an insulating layer located above the substrate;
a plurality of first electrodes located above the insulating layer in a pixel region and arranged in a two dimensional array with intervals therebetween;
a second electrode covering the first electrodes in plan-view;
a photoelectric conversion layer located between the second electrode and the first electrodes;
a planarization support layer located above the insulating layer in a region that in plan-view is more peripheral than the pixel region; and
a connecting electrode configured to apply an electrical voltage to the second electrode and located in a region that in plan-view is more peripheral than the region in which the planarization support layer is located, whereinthe planarization support layer and the first electrodes are at a same layer level above the insulating layer.
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Abstract
An insulating layer is layered above a substrate, and a plurality of pixel electrodes are formed above the insulating layer in a matrix with intervals therebetween. A photoelectric conversion layer and an opposing electrode are formed in respective order above the pixel electrodes. A dummy layer is formed above the insulating layer in a region that in plan-view is more peripheral than a pixel region in which the pixel electrodes are formed. The dummy layer is formed from the same material as the pixel electrodes. The dummy layer is composed of a plurality of dummy layer portions that are each equal to each of the pixel electrodes in terms of size in plan-view. The dummy layer functions as a support layer for planarization during polishing by chemical mechanical polishing.
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Citations
15 Claims
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1. A solid-state imaging apparatus comprising:
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a substrate; an insulating layer located above the substrate; a plurality of first electrodes located above the insulating layer in a pixel region and arranged in a two dimensional array with intervals therebetween; a second electrode covering the first electrodes in plan-view; a photoelectric conversion layer located between the second electrode and the first electrodes; a planarization support layer located above the insulating layer in a region that in plan-view is more peripheral than the pixel region; and a connecting electrode configured to apply an electrical voltage to the second electrode and located in a region that in plan-view is more peripheral than the region in which the planarization support layer is located, wherein the planarization support layer and the first electrodes are at a same layer level above the insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a solid-state imaging apparatus, the method comprising:
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a step (a) of preparing a substrate; a step (b) of layering an insulating layer above the substrate; a step (c) of forming a plurality of metal films, for first electrode use, above the insulating layer in a pixel region, the metal films being formed in a two dimensional array with intervals therebetween; a step (d) of forming a planarization support layer above the insulating layer in a region that in plan-view is more peripheral than the pixel region; a step (e) of forming an insulating material layer over upper surfaces of the metal films and the planarization support layer, and also over the insulating layer in the intervals between the metal films; a step (f) of polishing the insulating layer, the insulating material layer, the metal films and the planarization support layer by performing chemical mechanical polishing; a step (g) of forming a photoelectric conversion layer such as to entirely cover a plurality of first electrodes which are formed by the polishing of the metal films; a step (h) of forming a second electrode above the photoelectric conversion layer; and a step (i) of forming a connecting electrode, configured to apply an electrical voltage to the second electrode, above the insulating layer in a region that in plan-view is more peripheral than the planarization support layer, wherein the planarization support layer and the first electrodes are at a same layer level above the insulating layer.
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Specification