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METHOD OF PRODUCING EPITAXIAL SILICON WAFER, EPITAXIAL SILICON WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE

  • US 20140134779A1
  • Filed: 11/12/2013
  • Published: 05/15/2014
  • Est. Priority Date: 11/13/2012
  • Status: Active Grant
First Claim
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1. A method of producing an epitaxial silicon wafer, comprising:

  • a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and

    a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.

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