METHOD OF PRODUCING EPITAXIAL SILICON WAFER, EPITAXIAL SILICON WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE
First Claim
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1. A method of producing an epitaxial silicon wafer, comprising:
- a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and
a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.
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Abstract
Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer.
A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.
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Citations
14 Claims
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1. A method of producing an epitaxial silicon wafer, comprising:
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a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 13)
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8. A semiconductor epitaxial wafer, comprising:
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a silicon wafer free of dislocation clusters and COPs;
a modifying layer formed from a certain element in a surface portion of the silicon wafer; andan epitaxial layer on the modifying layer, wherein the full width half maximum of a concentration profile of the certain element in the depth direction of the modifying layer is 100 nm or less. - View Dependent Claims (9, 10, 11, 12, 14)
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Specification