FABRICATION OF SHIELDED GATE TRENCH MOSFET WITH INCREASED SOURCE-METAL CONTACT
First Claim
1. A method for fabricating a semiconductor device, comprising:
- forming a gate trench on a semiconductor substrate;
forming a spacer inside the gate trench;
forming one or more gate electrodes within the gate trench;
forming a body region;
forming a source region;
forming a contact trench;
disposing dielectric material within the gate trench;
removing at least a portion of the dielectric material such that at least a portion of the source region extends above the dielectric material; and
depositing a metal layer over at least a portion of a gate trench opening, at least a portion of the source region, and at least a portion of the contact trench.
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0 Petitions
Accused Products
Abstract
Fabricating a semiconductor device includes: forming a gate trench on a semiconductor substrate; forming a spacer inside the gate trench; forming one or more gate electrodes within the gate trench; implanting a body region; implanting a source region; forming a contact trench; disposing dielectric material within the gate trench; removing at least a portion of the dielectric material such that at least a portion of the source region extends above the dielectric material; and depositing a metal layer over at least a portion of a gate trench opening, at least a portion of the source region, and at least a portion of the contact trench.
7 Citations
14 Claims
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1. A method for fabricating a semiconductor device, comprising:
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forming a gate trench on a semiconductor substrate; forming a spacer inside the gate trench; forming one or more gate electrodes within the gate trench; forming a body region; forming a source region; forming a contact trench; disposing dielectric material within the gate trench; removing at least a portion of the dielectric material such that at least a portion of the source region extends above the dielectric material; and depositing a metal layer over at least a portion of a gate trench opening, at least a portion of the source region, and at least a portion of the contact trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification