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PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

  • US 20140134848A1
  • Filed: 11/07/2013
  • Published: 05/15/2014
  • Est. Priority Date: 11/09/2012
  • Status: Active Grant
First Claim
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1. A plasma etching method comprising:

  • modifying a photoresist having a predetermined pattern by plasma of HBr/Ar gas while applying a negative DC voltage to an upper electrode containing silicon disposed to face a target object in which an organic film and the photoresist are sequentially laminated; and

    using the photoresist modified at the modifying, etching the organic film by plasma of a processing gas which contains a CF-based gas and a CHF-based gas.

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