METHOD FOR GROWING EPITAXIAL DIAMOND

• US 20140137795A1
• Filed: 07/12/2013
• Published: 05/22/2014
• Est. Priority Date: 11/20/2012
• Status: Active Grant

• Current Assignee: National Chiao Tung University (Government of The Republic of China)
• Original Assignee: National Chiao Tung University (Government of The Republic of China)
• Inventors: CHANG, Li, WU, Ping-Hsun, CHIU, Kun-An
• Granted Patent: US 9,347,149 B2
• Time in Patent Office: Days
• US Class Current: 117/95
• CPC Class Codes: C30B 25/183 being provided with a buffer layer, e.g. a lattice matching layer
• CPC Class Codes: C30B 29/04 Diamond

Abstract

A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained.

Claims

1. A method for growing epitaxial diamond comprising:

providing a diamond substrate;

depositing at least a metallic layer on the diamond substrate, wherein a metal composition of the metallic layer has at least one of the following features that lattice mismatch between the metal composition and diamond is less than 15% and dissolution rate of carbon in the metal composition is less than 2 wt %;

providing a reaction atmosphere; and

depositing an epitaxial diamond layer on the diamond substrate and the metallic layer.

2. The method for growing epitaxial diamond according to claim 1, wherein the diamond substrate is a single crystal diamond, a polycrystalline diamond, a homoepitaxial diamond film or a hetepitaxial diamond film.

3. The method for growing epitaxial diamond according to claim 1, wherein the metallic layer is a non-continuous film.

4. The method for growing epitaxial diamond according to claim 1, wherein the method to deposit the metallic layer on the diamond substrate is using evaporation deposition, sputtering, molecular beam epitaxy (MBE) growth method, atmospheric pressure chemical vapor deposition, low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, spin coating method or chemical synthesis method.

5. The method for growing epitaxial diamond according to claim 1, wherein the metal composition of the metallic layer is selected from gold, silver, copper, platinum, iridium, nickel, cobalt, and palladium.

7. The method for growing epitaxial diamond according to claim 1, wherein the method for depositing the epitaxial diamond layer is using microwave plasma chemical vapor deposition, hot filament chemical vapor deposition, plasma enhanced chemical vapor deposition, low-pressure chemical vapor deposition or DC plasma chemical vapor deposition.

8. The method for growing epitaxial diamond according to claim 1, wherein the gas species of the reaction atmosphere is selected from hydrogen, argon, carbon oxide, carbon dioxide, alkanes, alkenes, and alkynes.

9. The method for growing epitaxial diamond according to claim 1, wherein the epitaxial diamond layer is formed as island initially and then laterally grows to form a continuous film.

10. The method for growing epitaxial diamond according to claim 1, wherein a carbide layer is arranged between the epitaxial diamond layer and the metallic layer.

11. The method for growing epitaxial diamond according to claim 1, wherein the epitaxial diamond layer is (100) or (111) epitaxy.

6. The method for growing epitaxial diamond according to claim wherein the thickness of the metallic layer is less than 1 micrometer.

12. A method for growing epitaxial diamond comprising:

providing a diamond substrate;

deposing at least a metallic layer on the diamond substrate, wherein a metal composition of the metallic layer has at least one of the following features that lattice mismatch between the metal composition and diamond is less than 15% and dissolution rate of carbon in the metal composition is less than 2 wt %;

providing an annealing process to crack the metallic layer into a non-continuous film;

providing a reaction atmosphere; and

depositing an epitaxial diamond layer on the diamond substrate and the metallic layer.

13. The method for growing epitaxial diamond according to claim 12, wherein the diamond substrate is a single crystal diamond, a polycrystalline diamond, a homoepitaxial diamond film or a hetepitaxial diamond film.

14. The method for growing epitaxial diamond according to claim 12, wherein the method to deposit a metallic layer on the diamond substrate is using evaporation deposition, sputtering, molecular beam epitaxy (MBE) growth, atmospheric pressure chemical vapor deposition, low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, spin coating method or chemical synthesis method.

15. The method for growing epitaxial diamond according to claim 12, wherein the metal composition of the metallic layer is selected from gold, silver, copper, platinum, iridium, nickel, cobalt, and palladium.

16. The method for growing epitaxial diamond according to claim 12, wherein the thickness of the metallic layer is less than 1 micrometer.

17. The method for growing epitaxial diamond according to claim 12, wherein the method to deposit a metallic layer on the diamond substrate is using evaporation deposition, sputtering, molecular beam epitaxy (MBE) growth, atmospheric pressure chemical vapor deposition, low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, spin coating method or chemical synthesis method.

18. The method for growing epitaxial diamond according to claim 12, wherein the gas species of the reaction atmosphere is selected from hydrogen, argon, carbon oxide, carbon dioxide, alkanes, alkenes, and alkynes.

19. The method for growing epitaxial diamond according to claim 12, wherein the annealing process comprises plasma annealing, protective atmosphere annealing, or vacuum annealing.

20. The method for growing epitaxial diamond according to claim 19, wherein the atmosphere of the plasma annealing is selected from hydrogen, argon, carbon oxide, carbon dioxide, alkanes, alkenes, and alkynes.

21. The method for growing epitaxial diamond according to claim 19, wherein the gas species of the protective atmosphere is selected from inert gases, hydrogen and nitrogen.

22. The method for growing epitaxial diamond according to claim 12, wherein the process temperature of the annealing process is higher than the melting point of the metallic layer or near the eutectic temperature of the metallic layer and carbon.

23. The method for growing epitaxial diamond according to claim 12, wherein the non-continuous film is plate-like, spherical or island-like agglomerates.

24. The method for growing epitaxial diamond according to claim 12, wherein the epitaxial diamond layer is formed as island initially and then laterally grows to form a continuous film.

25. The method for growing epitaxial diamond according to claim 12, wherein a carbide layer is arranged between the epitaxial diamond layer and the metallic layer.

26. The method for growing epitaxial diamond according to claim 12, wherein the epitaxial diamond layer is (100) or (111) epitaxy.