SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
1. A semiconductor light emitting device comprising:
- a first semiconductor layer of a first conductivity type containing a nitride semiconductor crystal and receiving tensile stress in a (0001) plane;
a second semiconductor layer of a second conductivity type containing a nitride semiconductor crystal;
a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than a lattice constant of the first semiconductor layer;
a conductive metal layer provided on an opposite side to the light emitting layer, on the second semiconductor layer, having a thermal expansion coefficient larger than a thermal expansion coefficient of a nitride semiconductor crystal, and supporting the first semiconductor layer, the light emitting layer, and the second semiconductor layer; and
a first stress application layer provided between the second semiconductor layer and the light emitting layer and relaxing tensile stress applied from the metal layer to the second semiconductor layer.
3 Assignments
0 Petitions
Accused Products
Abstract
According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a light emitting layer; a conductive metal layer; and a first stress application layer. The first semiconductor layer contains a nitride semiconductor crystal and receives tensile stress in a (0001) plane. The second semiconductor layer contains a nitride semiconductor crystal. The light emitting layer has an average lattice constant larger than a lattice constant of the first semiconductor layer. The conductive metal layer has a thermal expansion coefficient larger than a thermal expansion coefficient of a nitride semiconductor crystal. The first stress application layer is provided between the second semiconductor layer and the light emitting layer. The first stress application layer relaxes tensile stress applied from the metal layer to the second semiconductor layer.
24 Citations
26 Claims
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1. A semiconductor light emitting device comprising:
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a first semiconductor layer of a first conductivity type containing a nitride semiconductor crystal and receiving tensile stress in a (0001) plane; a second semiconductor layer of a second conductivity type containing a nitride semiconductor crystal; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than a lattice constant of the first semiconductor layer; a conductive metal layer provided on an opposite side to the light emitting layer, on the second semiconductor layer, having a thermal expansion coefficient larger than a thermal expansion coefficient of a nitride semiconductor crystal, and supporting the first semiconductor layer, the light emitting layer, and the second semiconductor layer; and a first stress application layer provided between the second semiconductor layer and the light emitting layer and relaxing tensile stress applied from the metal layer to the second semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor light emitting device comprising:
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a first semiconductor layer of a first conductivity type containing a nitride semiconductor crystal and having tensile strain in a (0001) plane; a second semiconductor layer of a second conductivity type containing a nitride semiconductor crystal; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than a lattice constant of the first semiconductor layer; a conductive metal layer provided on an opposite side to the light emitting layer, on the second semiconductor layer, having a thermal expansion coefficient larger than a thermal expansion coefficient of a nitride semiconductor crystal, and supporting the first semiconductor layer, the light emitting layer, and the second semiconductor layer; and a first stress application layer provided between the second semiconductor layer and the light emitting layer, containing a nitride semiconductor crystal, and having a lattice constant smaller than a lattice constant of the first semiconductor layer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification