GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF

• US 20140138621A1
• Filed: 01/28/2014
• Published: 05/22/2014
• Est. Priority Date: 07/18/2003
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: KIM, Seong Jae
• Granted Patent: US 8,927,960 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light emitting device including a substrate, a first conductive type semiconductor layer on the substrate, at least one In_xGa_1−xN layer (0<x<0.2) on the first conductive type semiconductor layer, at least one GaN layer directly on the at least one In_xGa₁₋N layer (0<x<0.2), an active layer on the at least one GaN layer, a second conductive type semiconductor layer on the active layer, and a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer.

Claims

1. A light emitting device comprising:

a substrate;

a first conductive type semiconductor layer on the substrate;

at least one In_xGa<sub>1−

x</sub>N layer (0<

x<

0.2) on the first conductive type semiconductor layer;

at least one GaN layer directly on the at least one In_xGa<sub>1−

x</sub>N layer (0<

x<

0.2);

an active layer on the at least one GaN layer;

a second conductive type semiconductor layer on the active layer; and

a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer.

2. The light emitting device according to claim 1, wherein a thickness of the at least one In_xGa₁₋

xN layer (0<

x<

0.2) is less than a thickness of the second conductive type semiconductor layer.

3. The light emitting device according to claim 2, wherein the at least one In_xGa₁₋

xN layer (0<

x<

0.2) has a thickness less than 200 Å

.

4. The light emitting device according to claim 1, wherein at least one In_xGa₁₋

xN layer (0<

x<

0.2) is directly on the first conductive type semiconductor layer.

5. The light emitting device according to claim 1, wherein an Indium composition of the at least one In_xGa₁₋

xN layer (0<

x<

0.2) is lower than an Indium composition of the active layer.

6. The light emitting device according to claim 1, wherein a thickness of the at least one GaN layer is 10 Å

˜

30 Å

.

7. The light emitting device according to claim 1, wherein the active layer comprises a multi-quantum well structure including Indium.

8. The light emitting device according to claim 1, wherein the active layer comprises a multi-quantum well structure including at least one dopant in at least one of an at least one well layer or an at least one barrier.

9. The light emitting device according to claim 1, wherein the active layer is directly on the at least one GaN layer.

10. The light emitting device according to claim 1, wherein the active layer comprises at least three layers.

11. The light emitting device according to claim 1, wherein the active layer comprises a well layer including an InGaN and a barrier layer including a GaN, and

wherein a thickness of the barrier layer is more than a thickness of the well layer.

12. The light emitting device according to claim 2, wherein the second conductive type semiconductor layer has a thickness of 750 Å

˜

1500 Å

.

13. The light emitting device according to claim 1, wherein light generated at the active layer is emitted via the transparent ITO (Indium-Tin-Oxide) layer to an external.

14. A light emitting device comprising:

a sapphire substrate;

an un-doped GaN layer on the sapphire substrate;

an n-type semiconductor layer on the un-doped GaN layer;

at least one In_xGa<sub>1−

x</sub>N layer (0<

x<

0.2) on the n-type semiconductor layer;

an active layer having InGaN and GaN on the at least one In_xGa<sub>1−

x</sub>N layer (0<

x<

0.2);

a p-type semiconductor layer on the active layer; and

a transparent ITO (Indium-Tin-Oxide) layer on the p-type semiconductor layer.

15. The light emitting device according to claim 14, further comprising at least one GaN layer directly on the at least one In_xGa₁₋

xN layer (0<

x<

0.2)

16. The light emitting device according to claim 14, wherein the un-doped GaN layer has a thickness of 1 μ

m˜

3 μ

m.

17. The light emitting device according to claim 14, wherein the p-type semiconductor layer has a thickness of 750 Å

˜

1500 Å

.

18. A light emitting device comprising:

a substrate;

a first conductive type semiconductor layer on the substrate;

at least one In_xGa<sub>1−

x</sub>N layer (0<

x<

0.2) on the first conductive type semiconductor layer;

at least one GaN layer directly on the at least one In_xGa<sub>1−

x</sub>N layer (0<

x<

0.2);

an active layer directly on the at least one GaN layer;

a second conductive type semiconductor layer on the active layer; and

a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer;

wherein the second conductive type semiconductor layer includes at least one well layer and at least one barrier layer.

19. The light emitting device according to claim 18, wherein the active layer comprises a well layer including an InGaN and a barrier layer including a GaN, and

wherein a thickness of the barrier layer is more than a thickness of the well layer.

20. The light emitting device according to claim 18, wherein the second conductive type semiconductor layer has a thickness of 750 Å

˜

1500 Å

.