Semiconductor Device, Electronic Device, and Method of Manufacturing Semiconductor Device

• US 20140138680A1
• Filed: 01/27/2014
• Published: 05/22/2014
• Est. Priority Date: 01/28/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Isa, Toshiyuki, Morisue, Masafumi, Kawamata, Ikuko
• Granted Patent: US 9,356,152 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 71/611 using printing deposition, e.g. ink jet printing

Abstract

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Claims

1. A semiconductor device comprising:

a first conductive layer;

a semiconductor layer adjacent to the first conductive layer;

an insulating layer between the first conductive layer and the semiconductor layer;

a second conductive layer electrically connected to the semiconductor layer;

wherein the first conductive layer comprises a convex portion,

wherein the convex portion overlaps with the second conductive layer and the semiconductor layer, and

wherein the semiconductor layer comprises indium and oxygen.

2. The semiconductor device according to claim 1, further comprising:

a pixel electrode electrically connected to the semiconductor layer.

3. The semiconductor device according to claim 1, wherein the semiconductor layer comprises zinc and gallium.

4. The semiconductor device according to claim 2, further comprising:

a third conductive layer electrically connected to the semiconductor layer,

wherein the pixel electrode is electrically connected to the third conductive layer.

5. The semiconductor device according to claim 1,

wherein the first conductive layer comprises a gate electrode layer,

wherein the second conductive layer comprises one of a source electrode layer and a drain electrode layer.

6. The semiconductor device according to claim 1,

wherein an edge of the semiconductor layer overlaps with the second conductive layer so that the semiconductor layer extends beyond a first edge of the second conductive layer and the semiconductor layer does not extend beyond a second edge of the second conductive layer, and

wherein the first edge is an opposite edge of the second edge.

7. The semiconductor device according to claim 2, wherein the pixel electrode is formed by a droplet discharge method.

8. A semiconductor device comprising:

a first conductive layer extending in a first direction;

a semiconductor layer adjacent to the first conductive layer;

an insulating layer between the first conductive layer and the semiconductor layer;

a second conductive layer electrically connected to the semiconductor layer, the second conductive layer extending in a second direction so as to intersect with the first conductive layer;

wherein the first conductive layer comprises a convex portion extending in the second direction,

wherein the convex portion overlaps with the second conductive layer and the semiconductor layer, and

wherein the semiconductor layer comprises indium and oxygen.

9. The semiconductor device according to claim 8, further comprising:

a pixel electrode electrically connected to the semiconductor layer.

10. The semiconductor device according to claim 8, wherein the semiconductor layer comprises zinc and gallium.

11. The semiconductor device according to claim 8, wherein the first direction is substantially perpendicular to the second direction.

12. The semiconductor device according to claim 9, further comprising:

a third conductive layer electrically connected to the semiconductor layer,

wherein the pixel electrode is electrically connected to the third conductive layer.

13. The semiconductor device according to claim 8,

wherein the first conductive layer comprises a gate electrode layer,

wherein the second conductive layer comprises one of a source electrode layer and a drain electrode layer.

14. The semiconductor device according to claim 8,

wherein an edge of the semiconductor layer overlaps with the second conductive layer so that the semiconductor layer extends beyond a first edge of the second conductive layer and the semiconductor layer does not extend beyond a second edge of the second conductive layer, and

wherein the first edge is an opposite edge of the second edge.

15. The semiconductor device according to claim 9, wherein the pixel electrode is formed by a droplet discharge method.

16. A semiconductor device comprising:

a first conductive layer extending in a first direction;

a semiconductor layer adjacent to the first conductive layer;

an insulating layer between the first conductive layer and the semiconductor layer;

a second conductive layer electrically connected to the semiconductor layer, the second conductive layer extending in a second direction so as to intersect with the first conductive layer;

a pixel electrode electrically connected to the semiconductor layer,

wherein the first conductive layer comprises a convex portion extending in the second direction,

wherein the convex portion overlaps with the second conductive layer and the semiconductor layer,

wherein the semiconductor layer comprises indium, zinc and oxygen, and

wherein the pixel electrode comprises indium, zinc and oxygen.

17. The semiconductor device according to claim 16, wherein the semiconductor layer comprises gallium.

18. The semiconductor device according to claim 16, wherein the first direction is substantially perpendicular to the second direction.

19. The semiconductor device according to claim 16, further comprising:

a third conductive layer electrically connected to the semiconductor layer,

wherein the pixel electrode is electrically connected to the third conductive layer.

20. The semiconductor device according to claim 16,

wherein the first conductive layer comprises a gate electrode layer,

wherein the second conductive layer comprises one of a source electrode layer and a drain electrode layer.

21. The semiconductor device according to claim 16,

wherein an edge of the semiconductor layer overlaps with the second conductive layer so that the semiconductor layer extends beyond a first edge of the second conductive layer and the semiconductor layer does not extend beyond a second edge of the second conductive layer, and

wherein the first edge is an opposite edge of the second edge.

22. The semiconductor device according to claim 16, wherein the pixel electrode is formed by a droplet discharge method.