SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Abstract
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
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Citations
20 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a driver circuit portion comprising a first transistor, the first transistor comprising a first oxide semiconductor layer and a conductive layer over the first oxide semiconductor layer; and a pixel portion comprising a second transistor, the second transistor comprising a second oxide semiconductor layer, wherein an insulating layer is over the first oxide semiconductor layer and the second oxide semiconductor layer, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises a portion in contact with the insulating layer, wherein the portion is in an oxygen-excess state, and wherein the conductive layer overlaps the portion. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a driver circuit portion comprising a first transistor, the first transistor comprising a first oxide semiconductor layer and a conductive layer over the first oxide semiconductor layer; and a pixel portion comprising a second transistor, the second transistor comprising a second oxide semiconductor layer, wherein an insulating layer is over the first oxide semiconductor layer and the second oxide semiconductor layer, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises a source region, a drain region, and a portion between the source region and the drain region, wherein the portion is in contact with the insulating layer, wherein the portion is in an oxygen-excess state, and wherein the conductive layer overlaps the portion. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification