SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20140138683A1
• Filed: 01/28/2014
• Published: 05/22/2014
• Est. Priority Date: 10/21/2009
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, SUZUKI, Kunihiko, TAKAHASHI, Masahiro
• Application Number:
  US14/165,917
• Publication Number:
  US 20140138683A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 23/564 Details not otherwise provided for, e.g. protection against moisture getters H01L23/26
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H₂O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.

Claims

1. A semiconductor device comprising:

a gate electrode layer;

a gate insulating layer over the gate electrode layer;

an oxide semiconductor layer over the gate insulating layer;

a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and

an insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer and in contact with part of the oxide semiconductor layer,

wherein at least one of the gate insulating layer and the insulating layer contains a halogen element.

2. The semiconductor device according to claim 1, wherein both of the gate insulating layer and the insulating layer contain the halogen element.

3. The semiconductor device according to claim 1, wherein the halogen element is fluorine or chlorine.

4. The semiconductor device according to claim 1, wherein the insulating layer includes dangling bonds.

5. The semiconductor device according to claim 1, further comprising a protective insulating layer over the insulating layer.

6. The semiconductor device according to claim 1, wherein the oxide semiconductor layer contains indium, gallium, or zinc.

7. The semiconductor device according to claim 1, wherein a concentration of the halogen element is 5×

10¹⁸ atoms/cm³ to 1×

10²⁰ atoms/cm³.

8. A semiconductor device comprising:

a gate electrode layer;

a gate insulating layer over the gate electrode layer;

an oxide semiconductor layer over the gate insulating layer;

an insulating layer over and in contact with the oxide semiconductor layer;

a source electrode layer and a drain electrode layer over the insulating layer, the source electrode layer and the drain electrode layer electrically connected to the oxide semiconductor layer,

wherein at least one of the gate insulating layer and the insulating layer contains a halogen element.

9. The semiconductor device according to claim 8, wherein the semiconductor device comprises a channel-stop type transistor.

10. The semiconductor device according to claim 8, wherein both of the gate insulating layer and the insulating layer contain the halogen element.

11. The semiconductor device according to claim 8, wherein the halogen element is fluorine or chlorine.

12. The semiconductor device according to claim 8, wherein the insulating layer includes dangling bonds.

13. The semiconductor device according to claim 8, further comprising a protective insulating layer over the insulating layer, the source electrode layer and the drain electrode layer.

14. The semiconductor device according to claim 8, wherein the oxide semiconductor layer contains indium, gallium, or zinc.

15. The semiconductor device according to claim 8, wherein a concentration of the halogen element is 5×

10¹⁸ atoms/cm³ to 1×

10²⁰ atoms/cm³.

16. A semiconductor device comprising:

an oxide semiconductor layer; and

an insulating layer comprising a region in contact with the oxide semiconductor layer,

wherein the insulating layer contains a halogen element, and

wherein a concentration of the halogen element is 5×

10¹⁸ atoms/cm³ to 1×

10²⁰ atoms/cm³.

17. The semiconductor device according to claim 16, wherein the region is in contact with a top surface of the oxide semiconductor layer.

18. The semiconductor device according to claim 16, wherein the region is in contact with a bottom surface of the oxide semiconductor layer.

19. The semiconductor device according to claim 16, wherein the semiconductor device comprises a channel-stop type transistor.

20. The semiconductor device according to claim 16, wherein the halogen element is fluorine or chlorine.

21. The semiconductor device according to claim 16, wherein the insulating layer includes dangling bonds.

22. The semiconductor device according to claim 16, further comprising a protective insulating layer over the insulating layer.

23. The semiconductor device according to claim 16, wherein the oxide semiconductor layer contains indium, gallium, or zinc.