SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A semiconductor device, comprising:
- first conductive layers alternately stacked with first interlayer insulating layers;
at least one second conductive layer alternately stacked with at least one second interlayer insulating layer on the first conductive layers and the first interlayer insulating layers;
a first semiconductor layer passing through the first conductive layers and the first interlayer insulating layers and including polysilicon; and
a second semiconductor layer formed on the first semiconductor layer and passing through the at least one second conductive layer and the at least one second interlayer insulating layer, wherein the second semiconductor layer includes silicon germanium,wherein the first semiconductor layer is configured as a channel layer of a memory cell and the second semiconductor layer is configured as a channel layer of a selection transistor.
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Accused Products
Abstract
A semiconductor device includes first conductive layers and first interlayer insulating layers stacked alternately with each other, at least one second conductive layer and at least one second interlayer insulating layer formed on the first conductive layers and the first interlayer insulating layers and stacked alternately with each other, a first semiconductor layer passing through the first conductive layers and the first interlayer insulating layers and including polysilicon, and a second semiconductor layer coupled to the first semiconductor layer and passing through the at least one second conductive layer the at least one second interlayer insulating layer, wherein the second semiconductor layer includes silicon germanium.
9 Citations
28 Claims
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1. A semiconductor device, comprising:
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first conductive layers alternately stacked with first interlayer insulating layers; at least one second conductive layer alternately stacked with at least one second interlayer insulating layer on the first conductive layers and the first interlayer insulating layers; a first semiconductor layer passing through the first conductive layers and the first interlayer insulating layers and including polysilicon; and a second semiconductor layer formed on the first semiconductor layer and passing through the at least one second conductive layer and the at least one second interlayer insulating layer, wherein the second semiconductor layer includes silicon germanium, wherein the first semiconductor layer is configured as a channel layer of a memory cell and the second semiconductor layer is configured as a channel layer of a selection transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device, comprising:
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memory cells including a first channel layer having a polysilicon layer; and selection transistors, each including a second channel layer connected to the first channel layer, wherein the second channel layer includes a silicon germanium layer. - View Dependent Claims (9, 10, 11, 12, 13, 21, 22, 23, 24)
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14-20. -20. (canceled)
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25. A semiconductor device, comprising:
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first conductive layers alternately stacked with first interlayer insulating layers; at least one second conductive layer alternately stacked with at least one second interlayer insulating layer on the first conductive layers and the first interlayer insulating layers; a first semiconductor layer passing through the first conductive layers and the first interlayer insulating layers and including polysilicon; a second semiconductor layer formed on the first semiconductor layer and passing through the at least one second conductive layer and the at least one second interlayer insulating layer, wherein the second semiconductor layer includes silicon germanium and has a tubular structure; a first insulating layer formed in an opening defined in a lower portion of the second semiconductor layer; and a junction formed in an opening defined in an upper portion of the second semiconductor layer. - View Dependent Claims (26, 27, 28)
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Specification