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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

  • US 20140138687A1
  • Filed: 03/14/2013
  • Published: 05/22/2014
  • Est. Priority Date: 11/16/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • first conductive layers alternately stacked with first interlayer insulating layers;

    at least one second conductive layer alternately stacked with at least one second interlayer insulating layer on the first conductive layers and the first interlayer insulating layers;

    a first semiconductor layer passing through the first conductive layers and the first interlayer insulating layers and including polysilicon; and

    a second semiconductor layer formed on the first semiconductor layer and passing through the at least one second conductive layer and the at least one second interlayer insulating layer, wherein the second semiconductor layer includes silicon germanium,wherein the first semiconductor layer is configured as a channel layer of a memory cell and the second semiconductor layer is configured as a channel layer of a selection transistor.

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