HIGH EFFICIENCY LIGHT EMITTING DIODE
First Claim
1. A method of fabricating a light-emitting diode, the method comprising:
- forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate;
forming a second substrate on the second conductivity-type semiconductor layer;
separating the first substrate from the first conductivity-type semiconductor layer;
forming a mask pattern comprising a plurality of openings on the first conductivity-type semiconductor layer exposed after the first substrate is separated;
etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other;
removing the mask pattern;
etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture; and
forming a passivation layer on the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer,wherein the passivation layer is formed in the recesses and on a surface of the sub-micro texture, and comprises a gently inclined surface relative to the surface of the sub-micro texture.
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Accused Products
Abstract
A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.
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Citations
35 Claims
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1. A method of fabricating a light-emitting diode, the method comprising:
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forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate; forming a second substrate on the second conductivity-type semiconductor layer; separating the first substrate from the first conductivity-type semiconductor layer; forming a mask pattern comprising a plurality of openings on the first conductivity-type semiconductor layer exposed after the first substrate is separated; etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other; removing the mask pattern; etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture; and forming a passivation layer on the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer, wherein the passivation layer is formed in the recesses and on a surface of the sub-micro texture, and comprises a gently inclined surface relative to the surface of the sub-micro texture. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A light-emitting diode, comprising:
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a second conductivity-type semiconductor layer disposed on a support substrate; a first conductivity-type semiconductor layer disposed on the second conductivity-type semiconductor layer; an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; and a passivation layer disposed on the first conductivity-type semiconductor layer, the second conductivity-type semiconductor , and the active layer, wherein the first conductivity-type semiconductor layer comprises a plurality of recesses spaced apart from each other and a sub-micro texture disposed between the recesses on a surface of the first conductivity-type semiconductor layer opposite to the first substrate, and wherein the passivation layer disposed on the first conductivity-type semiconductor layer is disposed in the recesses and on a surface of the sub-micro texture, the passivation layer comprising a more gently inclined surface relative to the surface of the sub-micro texture. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification