Method for Manufacturing a Semiconductor Device
First Claim
1. A method for forming a semiconductor device, the method comprising:
- forming in a semiconductor substrate a plurality of semiconductor mesas extending to an upper side so that adjacent semiconductor mesas are spaced apart from each other by one of a substantially empty trench and a trench substantially filled with a sacrificial layer selectively etchable with respect to the semiconductor mesas;
forming a support structure mechanically connecting the semiconductor mesas; and
processing the semiconductor substrate from the upper side while the semiconductor mesas are mechanically connected via the support structure.
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Accused Products
Abstract
A method for producing a semiconductor device is provided. The method includes: forming in a semiconductor substrate a plurality of semiconductor mesas extending to an upper side so that adjacent semiconductor mesas are spaced apart from each other by one of a substantially empty trench and a trench substantially filled with a sacrificial layer selectively etchable with respect to the semiconductor mesas; forming a support structure mechanically connecting the semiconductor mesas spaced apart from each other by one of the substantially empty trench and the trench substantially filled with the sacrificial layer; and processing the semiconductor substrate from the upper side while the semiconductor mesas are mechanically connected via the support structure.
26 Citations
20 Claims
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1. A method for forming a semiconductor device, the method comprising:
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forming in a semiconductor substrate a plurality of semiconductor mesas extending to an upper side so that adjacent semiconductor mesas are spaced apart from each other by one of a substantially empty trench and a trench substantially filled with a sacrificial layer selectively etchable with respect to the semiconductor mesas; forming a support structure mechanically connecting the semiconductor mesas; and processing the semiconductor substrate from the upper side while the semiconductor mesas are mechanically connected via the support structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for forming a semiconductor device, the method comprising:
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providing a semiconductor substrate having an upper side and comprising, in a vertical cross-section substantially orthogonal to the upper side, a plurality of semiconductor mesas of a first monocrystalline semiconductor material which are spaced apart from each other by sacrificial layers selectively etchable with respect to the first monocrystalline semiconductor material and arranged in trenches extending from the upper side into the semiconductor substrate; forming on the semiconductor mesas a support structure mechanically connecting the semiconductor mesas; at least partly replacing the sacrificial layers while the semiconductor mesas remain mechanically connected via the support structure; and at least partly removing the support structure. - View Dependent Claims (10, 11)
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12. A method for forming a semiconductor device, the method comprising:
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providing a semiconductor substrate comprising an upper side and a semiconductor layer comprised of a semiconductor material and extending to the upper side; etching wide trenches from the upper side into the semiconductor layer so that first semiconductor mesas are formed which are separated from each other by the wide trenches and connected by semiconductor portions comprised of the semiconductor material; forming dielectric layers at least at sidewalls of the first semiconductor mesas; and performing a selective epitaxial growth process to fill at least one of the wide trenches with a second semiconductor mesa. - View Dependent Claims (13, 14)
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15. A method for forming a semiconductor device, the method comprising:
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providing a semiconductor substrate having an upper side and comprising a semiconductor layer extending to the upper side; etching trenches from the upper side into the semiconductor layer so that semiconductor mesas comprising sidewalls are formed which are separated from each other by the trenches, each of the trenches comprising a bottom wall; forming at the upper side a support structure mechanically connecting the semiconductor mesas; and implanting dopants from the upper side into the bottom walls and/or the sidewalls while the semiconductor mesas are mechanically connected via the support structure. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification