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Method for Manufacturing a Semiconductor Device

  • US 20140141602A1
  • Filed: 10/25/2013
  • Published: 05/22/2014
  • Est. Priority Date: 11/21/2012
  • Status: Active Grant
First Claim
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1. A method for forming a semiconductor device, the method comprising:

  • forming in a semiconductor substrate a plurality of semiconductor mesas extending to an upper side so that adjacent semiconductor mesas are spaced apart from each other by one of a substantially empty trench and a trench substantially filled with a sacrificial layer selectively etchable with respect to the semiconductor mesas;

    forming a support structure mechanically connecting the semiconductor mesas; and

    processing the semiconductor substrate from the upper side while the semiconductor mesas are mechanically connected via the support structure.

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