OPTOELECTRONIC SEMICONDUCTOR CHIP, METHOD OF FABRICATION AND APPLICATION IN AN OPTOELECTRONIC COMPONENT
First Claim
Patent Images
1. An optoelectronic semiconductor chip comprising:
- an active layer with a first and a second major face, comprising a semiconductor material which emits or receives radiation when the semiconductor chip is in operation;
a patterned layer comprising three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation;
wherein the patterned layer comprises an inorganic-organic hybrid material.
2 Assignments
0 Petitions
Accused Products
Abstract
An optoelectronic semiconductor chip includes an active layer with a first and a second major face, including a semiconductor material which emits or receives radiation when the semiconductor chip is in operation; a patterned layer including three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation, wherein the patterned layer includes an inorganic-organic hybrid material.
-
Citations
16 Claims
-
1. An optoelectronic semiconductor chip comprising:
-
an active layer with a first and a second major face, comprising a semiconductor material which emits or receives radiation when the semiconductor chip is in operation; a patterned layer comprising three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation; wherein the patterned layer comprises an inorganic-organic hybrid material. - View Dependent Claims (2, 3, 4, 6, 7, 8, 10, 11, 12, 13, 14, 15)
-
-
5. The semiconductor chip according to claim, wherein the patterned layer has a layer thickness of 0.5 to 3 μ
- m.
-
9. The semiconductor chip according to claim, wherein the inorganic-organic hybrid material contains at least 20 wt. % of titanium and/or zirconium.
-
16. An optoelectronic semiconductor chip comprising:
-
an active layer with a first and a second major face, comprising a semiconductor material which emits or receives radiation along a beam path when the semiconductor chip is in operation; a patterned layer comprising three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in the beam path; wherein the patterned layer comprises an inorganic-organic hybrid material, the inorganic-organic hybrid material comprising; a hydrolytic condensation product, and an organic prepolymer, wherein the hydrolytic condensation product contains organofunctional silanes with organic substituents which are at least in part crosslinked with the organic prepolymer.
-
Specification