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MEMORY SYSTEM HAVING VARIABLE OPERATING VOLTAGE AND RELATED METHOD OF OPERATION

  • US 20140146600A1
  • Filed: 11/12/2013
  • Published: 05/29/2014
  • Est. Priority Date: 11/26/2012
  • Status: Active Grant
First Claim
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1. A magneto-resistive random access memory (MRAM), comprising:

  • an MRAM cell array having an MRAM cell; and

    a control and voltage generation unit configured to generate a back bias voltage for the MRAM cell,wherein the control and voltage generation unit comprises;

    a command decoder configured to generate a decoding signal in response to a command output from a memory controller; and

    a voltage controller and generator configured to generate the back bias voltage with a magnitude based on the decoding signal and a reset signal output from the memory controller.

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